STGF4M65DF2 STMicroelectronics

STGF4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.6 V (typ.) I = 4 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS TO-220FP PFC Figure 1: Internal schematic diagram Description C (2) This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit G (1) functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Sc12850 no tab E (3) Table 1: Device summary Order code Marking Package Packing STGF4M65DF2 G4M65DF2 TO-220FP Tube November 2016 DocID028678 Rev 4 1/16 www.st.com This is information on a product in full production. Contents STGF4M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 4.1 TO-220FP package information ...................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028678 Rev 4