AUIRGS30B60K AUTOMOTIVE GRADE AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR V = 600V C CES I = 50A,T = 100C C C Features At T = 175C J Low V Non Punch Through IGBT Technology CE (on) G t 10s, T = 150C 10s Short Circuit Capability SC J Square RBSOA V typ. = 1.95V CE(on) E Positive V Temperature Coefficient. CE (on) n-channel Maximum Junction Temperature rated at 175C C Lead-Free, RoHS Compliant C Automotive Qualified * * E C E G C Benefits G Benchmark Efficiency for Motor Control AUIRGS30B60K AUIRGSL30B60K Rugged Transient Performance for Increased Reliability 2 D Pak TO-262Pak Low EMI Excellent Current Sharing in Parallel Operation G C E Gate Collector Emitter Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRGSL30B60K TO-262 Tube 50 AUIRGSL30B60K Tube 50 AUIRGS30B60K 2 AUIRGS30B60K D Pak Tape and Reel Left 800 AUIRGS30B60KTRL Tape and Reel Right 800 AUIRGS30B60KTRR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless A otherwise specified. Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 78 C C I T = 100C Continuous Collector Current 50 C C A I Pulse Collector Current (Ref.Fig.C.T.5) 120 CM I Clamped Inductive Load Current 120 LM V RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 ISOL V V Continuous Gate-to-Emitter Voltage 20 GE P T = 25C Maximum Power Dissipation 370 D C W P T = 100C Maximum Power Dissipation 180 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case (IGBT) 0.41* JC Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 R C/W CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA Wt Weight 1.44 g * R (end of life) = 0.65C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150C and is accounted for by the JC physical wearout of the die attach medium. ** Qualification standards can be found at www.infineon.com 1 2017-09-08 AUIRGS/SL30B60K Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref. Fig. Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A V GE C (BR)CES Temperature Coeff. of Breakdown Voltage 0.40 V/C V = 0V, I = 1mA (25C-150C) V / T (BR)CES J GE C 1.95 2.35 I = 30A, V = 15V, T = 25C 5,6,7 C GE J 2.40 2.75 I = 30A, V = 15V, T = 150C V Collector-to-Emitter Saturation Voltage V C GE J CE(on) 8,9,10 2.6 2.95 I = 30A, V = 15V, T = 175C C GE J Gate Threshold Voltage 3.5 4.5 5.5 V I = 250A 8,9,10, V GE(th) C -10 mV/C = V , I = 1.0mA (25C-150C) Threshold Voltage temp. coefficient V CE GE C V /TJ GE(th) 11 Forward Transconductance 18 S V = 50V, I = 50A,PW = 80s gfe CE C 5.0 250 Collector-to-Emitter Leakage Current V = 0V, V = 600V GE CE 1000 2000 V = 0V, V = 600V,T = 150C I A GE CE J CES 1830 3000 V = 0V, V = 600V,T = 175C GE CE J Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V I GE CE GES Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref. Fig. Q Total Gate Charge (turn-on) 102 153 I = 30A 17 g C V = 15V CT1 Q Gate-to-Emitter Charge (turn-on) 14 21 ge nC GE Q Gate-to-Collector Charge (turn-on) 44 66 V = 400V gc CC E Turn-On Switching Loss 350 620 on E Turn-Off Switching Loss 825 955 off J I = 30A, V = 400V, E Total Switching Loss 1175 1575 C CC total V = +15V, t Turn-On delay time 46 60 d(on) GE CT4 ns t Rise time 28 39 R = 10 , L = 200 H, T = 25C r G J t Turn-Off delay time 185 200 d(off) t Fall time 31 40 f E Turn-On Switching Loss 635 1085 on 12,14, J E Turn-Off Switching Loss 1150 1350 CT4 off WF1,WF2 E Total Switching Loss 1785 2435 I = 30A, V = 400V, C CC total t Turn-On delay time 46 60 V = +15V, GE d(on) 13,15 ns t Rise time 28 39 r R = 10 , L = 200 H, T = 150C CT4 G J WF1 t Turn-Off delay time 205 235 d(off) WF2 t Fall time 32 42 f L Internal Emitter Inductance 7.5 Measured 5mm from package E nH C Input Capacitance 1750 V = 0V ies GE C Output Capacitance 160 V = 30V 16 oes pF CC C Reverse Transfer Capacitance 60 f = 1.0Mhz res T = 150C, I = 120A,Vp = 600V 4 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 500V, V = +15V to 0V CT2 CC GE Rg = 10 SCSOA Short Circuit Safe Operating Area T = 150C, Vp = 600V ,Rg = 10 CT3 J 10 s V = 360V, V = +15V to 0V WF3 CC GE 200 I (Peak) Peak Short Circuit Collector Current A WF3 SC Notes: V = 80% (V ), V = 20V, L = 28H, R = 22. CC CES GE G This is applied to D2Pak, when mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. Energy losses includetai and diode reverse recovery. 2 2017-09-08