DATA SHEET www.onsemi.com IGBT - Ultra Field Stop 40 A, 1200 V V = 1.7 V CEsat NGTB40N120FL3WG E = 1.1 mJ off This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides C superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward G voltage. Features E Extremely Efficient Trench with Field Stop Technology T = 175C Jmax Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are PbFree Devices G TO247 Typical Applications C CASE 340AM E Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Welding MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 1200 V CES 40N120FL3 Collector current I A C AYWWG TC = 25C 80 TC = 100C 40 Pulsed collector current, T I 160 A pulse CM limited by T Jmax Diode forward current I A F TC = 25C 80 TC = 100C 40 A = Assembly Location Y = Year Diode pulsed current, T limited I 160 A pulse FM WW = Work Week by T Jmax G = PbFree Package Gateemitter voltage V 20 V GE Transient gateemitter voltage 30 (T = 5 s, D < 0.10) pulse ORDERING INFORMATION Power Dissipation P W D TC = 25C 454 Device Package Shipping TC = 100C 227 NGTB40N120FL3WG TO247 30 Units / Rail Operating junction temperature range T 55 to +175 C J (PbFree) Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2021 Rev. 5 NGTB40N120FL3W/DNGTB40N120FL3WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.33 C/W JC Thermal resistance junctiontocase, for Diode R 0.61 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.7 1.95 V GE C CEsat V = 15 V, I = 40 A, T = 175C 2.3 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.4 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 0.5 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited Input capacitance C 4912 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 140 CE GE oes Reverse transfer capacitance C 80 res Gate charge total Q 212 nC g Gate to emitter charge V = 600 V, I = 40 A, V = 15 V Q 43 CE C GE ge Gate to collector charge Q 102 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 18 ns d(on) Rise time t 31 r Turnoff delay time T = 25C t 145 J d(off) V = 600 V, I = 40 A CC C Fall time t 107 f R = 10 g Turnon switching loss V = 15V E 1.6 mJ GE on Turnoff switching loss E 1.1 off Total switching loss E 2.7 ts Turnon delay time t 20 ns d(on) Rise time t 31 r Turnoff delay time T = 175C t 153 d(off) J V = 600 V, I = 40 A CC C Fall time t 173 f R = 10 g Turnon switching loss V = 15 V E 2.2 mJ GE on Turnoff switching loss E 1.7 off Total switching loss E 3.9 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 3.0 3.4 V GE F F V = 0 V, I = 40 A, T = 175C 2.8 GE F J Reverse recovery time t 86 ns rr Reverse recovery charge Q 0.56 c rr T = 25C J I = 40 A, V = 600 V Reverse recovery current F R I 12 A rrm di /dt = 500 A/ s F Diode peak rate of fall of reverse recovery dI /dt 210 A/ s rrm current during tb www.onsemi.com 2