TM V = 600V GenX3 600V IGBT IXGH36N60B3D4 CES I = 36A C110 V 1.8V CE(sat) Medium speed low Vsat PT IGBT for 5-40kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V G TAB GES C V Transient 30 V E GEM I T = 110C 36 A C110 C I T = 110C 10 A F110 C I T = 25C, 1ms 200 A CM C G = Gate C = Collector SSOA V = 15V, T = 125C, R = 5 I = 80 A GE J G CM E = Emitter TAB = Collector (RBSOA) Clamped inductive load V 600V CE P T = 25C 250 W C C Features T -55 ... +150 C J T 150 C JM z Optimized for low conduction and T -55 ... +150 C stg switching losses z M Mounting torque 1.13/10 Nm/lb.in. Square RBSOA d z Anti-parallel ultra fast diode T Maximum lead temperature for soldering 300 C L z International standard package T 1.6 mm (0.062 in.) from case for 10s 260 C SOLD Weight 6 g Advantages z High power density z Low gate drive requirement Applications Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. z J Power Inverters z BV I = 250 A, V = 0V 600 V UPS CES C GE z V I = 250A, V = V 3.0 5.0 V Motor Drives GE(th) C CE GE z SMPS I V = V 75 A CES CE CES z PFC Circuits V = 0V T = 125C 500 A GE J z Battery Chargers I V = 0V, V = 20V 100 nA z GES CE GE Welding Machines z V I = 30A, V = 15V, Note 1 1.5 1.8 V Lamp Ballasts CE(sat) C GE 2008 IXYS CORPORATION, All rights reserved DS99725B(06/08) IXGH36N60B3D4 Symbol Test Conditions Characteristic Values TO-247 (IXGH) AD Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 28 42 S fs C CE C 2280 pF ies C V = 25V, V = 0V, f = 1MHz 120 pF oes CE GE C 32 pF res Q 80 nC g Q I = 30A, V = 15V, V = 0.5 V 12 nC ge C GE CE CES Q 36 nC gc t 19 ns d(on) t 24 ns ri Inductive load, T = 25C J E 0.54 mJ on I = 30A, V = 15V C GE t 125 200 ns 1 = Gate d(off) V = 400V, R = 5 CE G 2 = Collector t 100 160 ns fi 3 = Emitter Tab = Collector E 0.80 1.5 mJ off t 19 ns d(on) t 26 ns ri Inductive load, T = 125C J E 0.90 mJ on I = 30A, V = 15V C GE t 180 ns d(off) V = 400V, R = 5 CE G t 170 ns fi E 1.50 mJ off R 0.50 C/W thJC R 0.21 C/W thCK Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J V I = 10A, V = 0V, Note 1 3.0 V F F GE T = 150C 1.7 V J t T 60 = 100C ns rr J I = 10A, -di /dt = 200A/s F F I 3 A T = 25C V = 300V RM J R 4 A T = 100C J R 2.5 C/W thJC Notes: 1.Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537