IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UQDF Description Using novel field stop IGBT technology, ON Semiconductors new th series of field stop 4 generation IGBTs offer superior conduction and www.onsemi.com switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction V I CES C heating and MWO. 650 V 40 A Features Max Junction Temperature 175C C Positive Temperature Coefficient for Easy Parallel Operating High Current Capability G Low Saturation Voltage: V = 1.33 V (Typ.) I = 40 A CE(sat) C 100% of the Parts Tested for I LM E High Input Impedance Fast Switching E C Tighten Parameter Distribution G This Device is PbFree and is RoHS Compliant Applications COLLECTOR (FLANGE) Induction Heating, MWO TO2473LD CASE 340CH MARKING DIAGRAM Y&Z&3&K FGH40T65 UQDF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40T65UQDF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2019 Rev. 3 FGH40T65UQDF/DFGH40T65UQDF ABSOLUTE MAXIMUM RATINGS Symbol Description FGH40T65UQDF Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 80 A C C T = 100C 40 A C I (Note 1) Pulsed Collector Current T = 25C 120 A LM C I (Note 2) Pulsed Collector Current 120 A CM I Diode Forward Current T = 25C 40 A F C Diode Forward Current T = 100C 20 A C I Pulsed Diode Maximum Forward Current 60 A FM P Maximum Power Dissipation T = 25C 231 W D C T = 100C 115 W C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 120 A, R = 20 , Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH40T65UQDF Unit R (IGBT) Thermal Resistance, Junction to Case, Max. 0.65 C/W JC R (Diode) Thermal Resistance, Junction to Case, Max. 1.75 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Qty per Tube FGH40T65UQDF FGH40T65UQDFF155 TO2473LD 30 www.onsemi.com 2