RJH60F3DPQ-A0#T0 Renesas

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage V = 1.4 V typ. (I = 20 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching t = 92 ns typ. (at I = 30 A, V = 400 V, V = 15 V, Rg = 5 , Ta = 25C, inductive load) f C CE GE Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to Emitter voltage V 600 V CES Gate to Emitter voltage V 30 V GES Collector current Tc = 25 C I 40 A C Tc = 100 C I 20 A C Note1 Collector peak current ic(peak) 80 A Note2 Collector to emitter diode forward peak current i (peak) 80 A DF Collector dissipation P 178.5 W C Junction to case thermal impedance (IGBT) j-c 0.7 C/W Junction to case thermal impedance (Diode) j-c 2.0 C/W Channel temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% R07DS0391EJ0200 Rev.2.00 Page 1 of 7 Jul 22, 2011 RJH60F3DPQ-A0 Preliminary Electrical Characteristics (Tj = 25C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current I 100 A V = 600V, V = 0 CES CE GE Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4 8 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.4 1.82 V I = 20 A, V = 15 V CE(sat) C GE Note3 1.6 V I = 40 A, V = 15 V C GE Input capacitance Cies 1260 pF V = 25 V CE V = 0 GE Output capacitance Coes 73 pF f = 1 MHz Reverse transfer capacitance Cres 21 pF Switching time t 44 ns I = 30 A d(on) C V = 400 V, V = 15 V t 96 ns CE GE r Note3 Rg = 5 t 65 ns d(off) Inductive Load t 92 ns f Note3 C-E diode forward voltage V 1.2 2.1 V I = 20 A ECF1 F Note3 V 1.5 V I = 40 A ECF2 F C-E diode reverse recovery time t 90 ns I = 20 A rr F di /dt = 100 A/ s F Notes: 3. Pulse test R07DS0391EJ0200 Rev.2.00 Page 2 of 7 Jul 22, 2011