APT40GR120B2SCD10 APT40GR120B2SCD10 1200V, 40A, V = 2.5V Typical CE(on) Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. Features Low Saturation Voltage Short Circuit Withstand Rated Low Tail Current High Frequency Switching RoHS Compliant Ultra Low Leakage Current Combi (IGBT and Diode) Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter Ratings Unit V Collector Emitter Voltage 1200 ces V V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 88 C1 C I Continuous Collector Current T = 110C 40 A C2 C 1 I Pulsed Collector Current 160 CM SCWT Short Circuit Withstand Time: V = 600V, V = 15V, T =125C 10 s CE GE C P Total Power Dissipation T = 25C 500 W D C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V Collector-Emitter Breakdown Voltage (V = 0V, I = 1.0mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 2.0mA, T = 25C) 3.5 5.0 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 40A, T = 25C) 2.5 3.2 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 40A, T = 125C) 3.5 GE C j Collector-Emitter On Voltage (V = 15V, I = 88A, T = 25C) 3.5 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 1200 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 300 CE GE j I Gate-Emitter Leakage Current (V = 20V) 250 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT40GR120B2SCD10 Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 3980 ies C Output Capacitance V = 0V, V = 25V 510 pF oes GE CE C Reverse Transfer Capacitance f = 1MHz 80 res V Gate to Emitter Plateau Voltage 7V GEP Gate Charge 3 Q Total Gate Charge 210 g V = 15V GE Q Gate-Emitter Charge 25 ge V = 600V nC CE 90 Q Gate- Collector Charge I = 40A gc C t Turn-On Delay Time Inductive Switching (25C) 20 d(on) t Current Rise Time V = 600V 21 r CC ns t Turn-Off Delay Time V = 15V 166 d(off) GE t Current Fall Time I = 40A 42 f C 5 4 E Turn-On Switching Energy R = 4.3 929 1800 on G J 6 E Turn-Off Switching Energy T = +25C 1070 1650 off J t Turn-On Delay Time Inductive Switching (125C) 20 d(on) t Current Rise Time V = 600V 20 r CC ns t Turn-Off Delay Time V = 15V 187 d(off) GE t Current Fall Time I = 40A 48 f C 5 4 E Turn-On Switching Energy R = 4.3 971 2000 on G J 6 1042 2500 E Turn-Off Switching Energy T = +125C off J THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit Junction to Case Thermal Resistance (IGBT) .25 R JC Junction to Case Thermal Resistance (Diode) 1.00 C/W R Junction to Ambient Thermal Resistance 40 JA .22 oz W Package Weight T 6.2 g 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the clamped inductive turn on energy that includes a commutating diode reverse transient current in the IGBT turn on energy loss. A combi device is used for the on clamping diode. 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.30 0.25 D = 0.9 0.20 0.7 0.15 0.5 Note: t 1 0.10 0.3 t 2 t 0.05 1 t Duty Factor D = / 0.1 2 Peak T = P x Z +T J DM JC C SINGLE PULSE 0.05 0 -4 -3 -2 10 10 10 0.1 1 10 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 052-6406 Rev B 5-2020 Z , THERMAL IMPEDANCE (C/W) JC P DM