T O-247 TYPICAL PERFORMANCE CURVES APT15GT120BR SR(G) APT15GT120BR APT15GT120SR APT15GT120BR(G) APT15GT120SR(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT (B) 3 D PA K The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch (S) Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast C switching speed. G E G Low Forward Voltage Drop H igh Freq. Switching to 50KHz C E Low Tail Current Ultra Low Leakage Current C RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specifi ed. C Symbol Parameter UNIT APT15GT120BR SR(G) V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 36 C1 C I Continuous Collector Current T = 110C 18 Amps C2 C 1 I Pulsed Collector Current T = 150C 45 CM C Switching Safe Operating Area T = 150C SSOA 45A 960V J P Total Power Dissipation Watts 250 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 1mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 0.6mA, T = 25C) GE(TH) 4.5 5.5 6.5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 15A, T = 25C) GE C j 2.5 3.0 3.6 V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 15A, T = 125C) GE C j 3.8 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 100 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 480 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT15GT120BR SR(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance Capacitance 1250 ies C pF Output Capacitance V = 0V, V = 25V 100 oes GE CE C f = 1 MHz Reverse Transfer Capacitance 65 res V V Gate-to-Emitter Plateau Voltage Gate Charge 10 GEP 3 Q V = 15V Total Gate Charge 105 g GE V = 600V Q nC Gate-Emitter Charge CE 10 ge I = 15A Q C Gate-Collector Mille) Charge 60 gc T = 150C, R = 5, V = J G GE Switching Safe Operating Area SSOA A 45 15V, L = 100H,V = 960V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 10 V = 800V t Current Rise Time 11 CC r ns t V = 15V Turn-off Delay Time d(off ) GE 85 I = 15A t C Current Fall Time 35 f R = 5 4 G E Turn-on Switching Energy 585 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 800 on2 6 E Turn-off Switching Energy 260 off t Inductive Switching (125C) Turn-on Delay Time 10 d(on) t V = 800V Current Rise Time 11 r CC ns V = 15V t Turn-off Delay Time GE 95 d(off ) I = 15A t C Current Fall Time 42 f R = 5 4 4 G E Turn-on Switching Energy 590 on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 1440 on2 6 E Turn-off Switching Energy 340 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .50 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the eff ect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off Microsemi Reserves the right to change, without notice, the specifi cations and information contained herein. 052-6266 Rev E 3-2012