IRGB15B60KDPbF IRGS15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KDPbF ULTRAFAST SOFT RECOVERY DIODE C Features V = 600V CES Low VCE (on) Non Punch Through IGBT Technology. I = 15A, T =100C C C Low Diode VF. 10s Short Circuit Capability. G Square RBSOA. t > 10s, T =150C sc J Ultrasoft Diode Reverse Recovery Characteristics. E Positive VCE (on) Temperature Coefficient. V typ. = 1.8V CE(on) n-channel Lead-Free Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. 2 TO-220AB D Pak TO-262 IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 31 C C I T = 100C Continuous Collector Current 15 C C I Pulsed Collector Current 62 CM I Clamped Inductive Load Current 62 A LM I T = 25C Diode Continuous Forward Current 31 F C I T = 100C Diode Continuous Forward Current 15 F C I Diode Maximum Forward Current 64 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 208 D C P T = 100C Maximum Power Dissipation 83 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 0.6 JC R Junction-to-Case - Diode 2.1 JC R Case-to-Sink, flat, greased surface 0.50 C/W CS R Junction-to-Ambient, typical socket mount 62 JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA Wt Weight 1.44 g www.irf.com 1 10/03/05IRGB/S/SL15B60KDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.3 V/C V = 0V, I = 1.0mA, (25C-150C) (BR)CES J GE C 5, 6,7 V Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 I = 15A, V = 15V CE(on) C GE 9, 10,11 2.05 2.50 V I = 15A, V = 15V T = 125C C GE J 2.10 2.60 I = 15A, V = 15V T = 150C C GE J 9, 10,11 V Gate Threshold Voltage 3.5 4.5 5.5 V V = V , I = 250A GE(th) CE GE C 12 V /T Temperature Coeff. of Threshold Voltage -10 mV/C V = V , I = 1.0mA, (25C-150C) GE(th) J CE GE C g Forward Transconductance 10.6 S V = 50V, I = 20A, PW=80s fe CE C I Zero Gate Voltage Collector Current 5.0 150 A V = 0V, V = 600V CES GE CE 500 1000 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.20 1.45 I = 15A FM C 1.20 1.45 V I = 15A T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig. Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 56 84 I = 15A C Qge Gate - Emitter Charge (turn-on) 7.0 10 nC V = 400V CT1 CC Qgc Gate - Collector Charge (turn-on) 26 39 V = 15V GE CT4 E Turn-On Switching Loss 220 330 J I = 15A, V = 400V on C CC E Turn-Off Switching Loss 340 455 V = 15V,R = 22, L = 200H off GE G E Total Switching Loss 560 785 Ls = 150nH T = 25C tot J t Turn-On Delay Time 34 44 I = 15A, V = 400V d(on) C CC t Rise Time 16 22 V = 15V, R = 22, L = 200H CT4 r GE G t Turn-Off Delay Time 184 200 ns Ls = 150nH, T = 25C d(off) J t Fall Time 20 26 f CT4 E Turn-On Switching Loss 355 470 I = 15A, V = 400V on C CC E Turn-Off Switching Loss 490 600 J V = 15V,R = 22, L = 200H 13,15 off GE G WF1WF2 E Total Switching Loss 835 1070 Ls = 150nH T = 150C tot J t Turn-On Delay Time 34 44 I = 15A, V = 400V 14, 16 d(on) C CC t Rise Time 18 25 V = 15V, R = 22, L = 200H CT4 r GE G t Turn-Off Delay Time 203 226 ns Ls = 150nH, T = 150C WF1 d(off) J t Fall Time 28 36 f WF2 C Input Capacitance 850 V = 0V ies GE C Output Capacitance 75 pF V = 30V oes CC C Reverse Transfer Capacitance 35 f = 1.0MHz res 4 T = 150C, I = 62A, Vp =600V J C RBSOA Reverse Bias Safe Operting Area FULL SQUARE CT2 V = 500V, V = +15V to 0V,R = 22 CC GE G CT3 s T = 150C, Vp =600V,R = 22 J G SCSOA Short Circuit Safe Operting Area 10 WF4 V = 360V, V = +15V to 0V CC GE 17,18,19 Erec Reverse Recovery energy of the diode 540 720 J T = 150C J 20,21 t Diode Reverse Recovery time 92 111 ns V = 400V, I = 15A, L = 200H rr CC F CT4,WF3 I Diode Peak Reverse Recovery Current 29 33 A V = 15V,R = 22, Ls = 150nH rr GE G Note to are on page 15 2 www.irf.com