X-On Electronics has gained recognition as a prominent supplier of IXYX100N120B3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXYX100N120B3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXYX100N120B3 IXYS

IXYX100N120B3 electronic component of IXYS
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Part No.IXYX100N120B3
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors IGBT XPT-GENX3
Datasheet: IXYX100N120B3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
300: USD 18.009 ea
Line Total: USD 5402.7 
Availability - 0
MOQ: 300  Multiples: 300
Pack Size: 300
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 300
Multiples : 300
300 : USD 18.009

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 26.768
2 : USD 25.312
3 : USD 25.298

   
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We are delighted to provide the IXYX100N120B3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXYX100N120B3 and other electronic components in the IGBT Transistors category and beyond.

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Preliminary Technical Information TM 1200V XPT IGBTs V = 1200V IXYK100N120B3 CES TM GenX3 I = 100A IXYX100N120B3 C110 V 2.6V CE(sat) t = 240ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-264 (IXYK) G Symbol Test Conditions Maximum Ratings C E V T = 25C to 175C 1200 V Tab CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE PLUS247 (IXYX) V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Capability) 225 A C25 C I Terminal Current Limit 160 A LRMS G I T = 110C 100 A C110 C G C Tab I T = 25C, 1ms 530 A E CM C I T = 25C 50 A A C G = Gate E = Emitter E T = 25C 1.2 J AS C C = Collector Tab = Collector SSOA V = 15V, T = 150C, R = 1 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features P T = 25C 1150 W C C T -55 ... +175 C z Optimized for 5-30kHZ Switching J z T 175 C Square RBSOA JM z Positive Thermal Coefficient of T -55 ... +175 C stg Vce(sat) T Maximum Lead Temperature for Soldering 300 C z L Avalanche Rated z T 1.6 mm (0.062in.) from Case for 10s 260 C International Standard Packages SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Advantages Weight TO-264 10 g z High Power Density PLUS247 6 g z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV I = 250A, V = 0V 1200 V z CES C GE Power Inverters z UPS V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Motor Drives I V = V , V = 0V 25 A z CES CE CES GE SMPS z T = 150C 1 mA PFC Circuits J z Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE z Welding Machines z V I = I , V = 15V, Note 1 2.20 2.60 V Lamp Ballasts CE(sat) C C110 GE T = 150C 2.76 V J 2013 IXYS CORPORATION, All Rights Reserved DS100519A(03/13)IXYK100N120B3 IXYX100N120B3 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 6000 pF ies C V = 25V, V = 0V, f = 1MHz 367 pF oes CE GE C 127 pF res Q 250 nC g(on) Q I = I , V = 15V, V = 0.5 V 42 nC ge C C110 GE CE CES Q 96 nC gc t 30 ns d(on) t 90 ns Inductive load, T = 25C ri J E 7.7 mJ I = I , V = 15V on C C110 GE Terminals: 1 = Gate t 153 ns V = 0.5 V , R = 1 2,4 = Collector d(off) CE CES G 3 = Emitter t 240 ns fi Note 2 E 7.1 11.5 mJ off t 29 ns d(on) Inductive load, T = 150C t 96 ns J ri I = I , V = 15V E 11.4 mJ C C110 GE on t V = 0.5 V , R = 1 190 ns CE CES G d(off) t 260 ns Note 2 fi E 10.1 mJ off R 0.13 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches PRELIMANARY TECHNICAL INFORMATION Min. Max. Min. Max. A 4.83 5.21 .190 .205 The product presented herein is under development. The Technical Specifications offered are derived A 2.29 2.54 .090 .100 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a 1 A 1.91 2.16 .075 .085 2considered reflectio of the anticipated result. IXYS reserves the right to change limits, test b 1.14 1.40 .045 .055 conditions, and dimensions without notice. b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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