Preliminary Technical Information TM 1200V XPT IGBTs V = 1200V IXYK100N120B3 CES TM GenX3 I = 100A IXYX100N120B3 C110 V 2.6V CE(sat) t = 240ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-264 (IXYK) G Symbol Test Conditions Maximum Ratings C E V T = 25C to 175C 1200 V Tab CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE PLUS247 (IXYX) V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Capability) 225 A C25 C I Terminal Current Limit 160 A LRMS G I T = 110C 100 A C110 C G C Tab I T = 25C, 1ms 530 A E CM C I T = 25C 50 A A C G = Gate E = Emitter E T = 25C 1.2 J AS C C = Collector Tab = Collector SSOA V = 15V, T = 150C, R = 1 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features P T = 25C 1150 W C C T -55 ... +175 C z Optimized for 5-30kHZ Switching J z T 175 C Square RBSOA JM z Positive Thermal Coefficient of T -55 ... +175 C stg Vce(sat) T Maximum Lead Temperature for Soldering 300 C z L Avalanche Rated z T 1.6 mm (0.062in.) from Case for 10s 260 C International Standard Packages SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Advantages Weight TO-264 10 g z High Power Density PLUS247 6 g z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV I = 250A, V = 0V 1200 V z CES C GE Power Inverters z UPS V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Motor Drives I V = V , V = 0V 25 A z CES CE CES GE SMPS z T = 150C 1 mA PFC Circuits J z Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE z Welding Machines z V I = I , V = 15V, Note 1 2.20 2.60 V Lamp Ballasts CE(sat) C C110 GE T = 150C 2.76 V J 2013 IXYS CORPORATION, All Rights Reserved DS100519A(03/13)IXYK100N120B3 IXYX100N120B3 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 6000 pF ies C V = 25V, V = 0V, f = 1MHz 367 pF oes CE GE C 127 pF res Q 250 nC g(on) Q I = I , V = 15V, V = 0.5 V 42 nC ge C C110 GE CE CES Q 96 nC gc t 30 ns d(on) t 90 ns Inductive load, T = 25C ri J E 7.7 mJ I = I , V = 15V on C C110 GE Terminals: 1 = Gate t 153 ns V = 0.5 V , R = 1 2,4 = Collector d(off) CE CES G 3 = Emitter t 240 ns fi Note 2 E 7.1 11.5 mJ off t 29 ns d(on) Inductive load, T = 150C t 96 ns J ri I = I , V = 15V E 11.4 mJ C C110 GE on t V = 0.5 V , R = 1 190 ns CE CES G d(off) t 260 ns Note 2 fi E 10.1 mJ off R 0.13 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches PRELIMANARY TECHNICAL INFORMATION Min. Max. Min. Max. A 4.83 5.21 .190 .205 The product presented herein is under development. The Technical Specifications offered are derived A 2.29 2.54 .090 .100 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a 1 A 1.91 2.16 .075 .085 2considered reflectio of the anticipated result. IXYS reserves the right to change limits, test b 1.14 1.40 .045 .055 conditions, and dimensions without notice. b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537