IGBT - Field Stop 600 V, 40 A FGH40N60UF Description Using novel field stop IGBT technology, ON Semiconductors field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. Features High Current Capability Low Saturation Voltage: V = 1.8 V I = 40 A CE(sat) C High Input Impedance Fast Switching These Device is PbFree and is RoHS Compliant E Applications C GG Solar Inverter, UPS, Welder, PFC COLLECTOR ABSOLUTE MAXIMUM RATINGS (FLANGE) Description Symbol Value Unit TO2473LD CASE 340CK Collector to Emitter Voltage V 600 V CES Gate to Emitter Voltage V 20 V GES MARKING DIAGRAMS Transient Gate to Emitter Voltage 30 Collector Current T = 25C I 80 A C C Collector Current T = 100C 40 A C Y&Z&3&K FGH40N60 Pulsed Collector Current T = 25C I 120 A C CM (Note 1) UF Maximum Power Dissipation T = 25C P 290 W C D Maximum Power Dissipation T = 100C 116 W C Operating Junction Temperature T 55 to C J +150 Storage Temperature Range T 55to C stg Y = ON Semiconductor Logo +150 &Z = Assembly Plant Code Maximum Lead Temp. for Soldering T 300 C &3 = Numeric Date Code L Purposes, 1/8 from Case for 5 Seconds &K = Lot Code FGH40N60UF = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2020 Rev. 3 FGH40N60UF/DFGH40N60UF THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case R (IGBT) 0.43 C/W JC Thermal Resistance, Junction to Ambient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH40N60UFTU FGH40N60UF TO2473 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 650 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE On Characteristics GE Threshold Voltage V 4.0 5.0 6.5 V I = 250 A, V = V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 40 A, V = 15 V 1.8 2.4 V CE(sat) C GE I = 40 A, V = 15 V, T = 125C 2.0 V C GE C Dynamic Characteristics V = 30 V, V = 0 V, f = 1 MHz Input Capacitance C 2110 pF ies CE GE Output Capacitance C 200 pF oes Reverse Transfer Capacitance C 60 pF res Switching Characteristics TurnOn Delay Time t V = 400 V, I = 40 A, 24 ns CC C d(on) R = 10 V = 15 V, G GE Rise Time t 44 ns r Inductive Load, T = 25C C TurnOff Delay Time t 112 ns d(off) Fall Time t 30 60 ns f TurnOn Switching Loss E 1.19 mJ on TurnOff Switching Loss E 0.46 mJ off Total Switching Loss E 1.65 mJ ts TurnOn Delay Time t V = 400 V, I = 40 A, 24 ns d(on) CC C R = 10 V = 15 V, G GE Rise Time t 45 ns r Inductive Load, T = 125C C TurnOff Delay Time t 120 ns d(off) Fall Time t 40 ns f TurnOn Switching Loss E 1.2 mJ on TurnOff Switching Loss E 0.69 mJ off Total Switching Loss E 1.89 mJ ts Total Gate Charge Q V = 400 V, I = 40 A, V = 15 V 120 nC CE C GE g Gate to Emitter Charge Q 14 nC ge Gate to Collector Charge Q 58 nC gc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2