IGBT - Field Stop 600 V, 40 A FGH40N60SMDF Description Using Novel Field Stop IGBT Technology, ON Semiconductors nd new series of field stop 2 generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature: T = 175C J Positive Temperature Coefficient for Easy Parallel Operating G High Current Capability Low Saturation Voltage: V = 1.9 V (Typ.) I = 40 A CE(sat) C E High Input Impedance E Fast Switching: E = 6.5 J/A OFF C GG Tightened Parameter Distribution This Device is PbFree, Halogen Free/BFR Free and is RoHS COLLECTOR Compliant (FLANGE) Applications TO2473LD Solar Inverter, UPS, Welder, PFC, Telecom, ESS CASE 340CK MARKING DIAGRAMS Y&Z&3&K FGH40N60 SMDF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N60SMDF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: September, 2020 Rev. 3 FGH40N60SMDF/DFGH40N60SMDF ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise specified) C Parameter Symbol Ratings Unit Collector to Emitter Voltage V 600 V CES Gate to Emitter Voltage V 20 V GES Collector Current T = 25C I 80 A C C Collector Current T = 100C 40 A C Pulsed Collector Current (Note 1) T = 25C I 120 A C CM Maximum Power Dissipation T = 25C P 349 W C D Maximum Power Dissipation T = 100C 174 W C Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case (IGBT) R 0.43 C/W JC Thermal Resistance, Junction to Case (Diode) R 1.45 C/W JC Thermal Resistance, Junction to Ambient 40 C/W R JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH40N60SMDF FGH40N60SMDF TO2473LD N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 600 V CES GE C Temperature Coefficient of Breakdown BV / V = 0 V, I = 250 A 0.6 V/C CES GE C Voltage T J Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS GE Threshold Voltage V I = 250 A, V = V 3.5 4.6 6.0 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 40 A, V = 15 V 1.9 2.5 V CE(sat) C GE I = 40 A, V = 15 V, T = 150C 2.1 V C GE C www.onsemi.com 2