IGBT - Shorted-Anode 1300 V, 30 A FGH30S130P Description Using advanced field stop trench and shortedanode technology, ON Semiconductors shortedanode trench IGBTs offer superior www.onsemi.com conduction and switching performances for soft switching applications. The device can operate in parallel configuration with C exceptional avalanche capability. This device is designed for induction heating and microwave oven. Features G High Speed Switching Low Saturation Voltage: V =1.75 V I = 30 A CE(sat) C E High Input Impedance This Device is PbFree and is RoHS Compliant E C GG Applications Induction Heating, Microwave Oven COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH30S 130P Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH30S130P = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: September, 2020 Rev. 3 FGH30S130P/DFGH30S130P ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Description Symbol Rating Unit Collector to Emitter Voltage V 1300 V CES Gate to Emitter Voltage V 25 V GES Collector Current T = 25C I 60 A C C Collector Current T = 100C 30 A C Pulsed Collector Current (Note 1) I 90 A CM Diode Continuous Forward Current T = 25C I 60 A C F Diode Continuous Forward Current T = 100C 30 A C Maximum Power Dissipation T = 25C P 500 W C D Maximum Power Dissipation T = 100C 250 W C Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by Tjmax. THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case, Max R (IGBT) 0.3 C/W JC Thermal Resistance, Junction to Ambient, Max R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Reel Size Tape Width Quantity FGH30S130P FGH30S130P TO247 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector CutOff Current I V = 1300, V = 0 V 1 mA CES CE GE GE Leakage Current I V = V , V = 0 V 500 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 30 mA, V = V 4.5 6.0 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 30 A, V = 15 V, T = 25C 1.75 2.3 V CE(sat) C GE C I = 30 A, V = 15 V, T = 125C 1.85 V C GE C I = 30 A, V = 15 V, T = 175C 1.9 V C GE C Diode Forward Voltage V I = 30 A, T = 25C 1.7 2.2 V FM F C I = 30 A, T = 175C 2.1 V F C www.onsemi.com 2