X-On Electronics has gained recognition as a prominent supplier of FGH20N60SFDTU_F085 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGH20N60SFDTU_F085 IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGH20N60SFDTU_F085 ON Semiconductor

FGH20N60SFDTU_F085 electronic component of ON Semiconductor
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Part No.FGH20N60SFDTU_F085
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: Fairchild Semiconductor IGBT Transistors N-Ch 20A 600V FS IGBT
Datasheet: FGH20N60SFDTU_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 9.7233
10 : USD 3.4939
25 : USD 3.3444
100 : USD 2.9491
450 : USD 2.575
900 : USD 2.3614
2700 : USD 2.2972
N/A

Obsolete
0
MOQ : 4
Multiples : 1
4 : USD 1.9786
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FGH20N60SFDTU_F085 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGH20N60SFDTU_F085 and other electronic components in the IGBT Transistors category and beyond.

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IGBT - Field Stop 600 V, 20 A FGH20N60SFDTU, FGH20N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductors www.onsemi.com new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage: V = 2.2 V I = 20 A CE(sat) C G High Input Impedance Fast Switching E Qualified to Automotive Requirements of AECQ101 (FGH20N60SFDTUF085) These Devices are PbFree and are RoHS Compliant E C GG Applications Automotive Chargers, Converters, High Voltage Auxiliaries Inverters, PFC, UPS TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K Y&Z&3&K FGH20N60 FGH20N60 SFDTU SFD Automotive Industrial Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH20N60SFD, FGH20N60SFDTU = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: February, 2020 Rev. 3 FGH20N60SFDTUF085/DFGH20N60SFDTU, FGH20N60SFDTU F085 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage V 600 V CES Gate to Emitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 V Collector Current TC = 25C I 40 A C TC = 100C 20 A Pulsed Collector Current TC = 25C I (Note 1) 60 A CM Maximum Power Dissipation TC = 25C P 165 W D TC = 100C 66 W Operating Junction Temperature T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance JunctiontoCase R (IGBT) 0.76 C/W JC Thermal Resistance JunctiontoCase 2.51 C/W R (Diode) JC Thermal Resistance JunctiontoAmbient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FGH20N60SFDTU FGH20N60SFD TO247 Tube 30 FGH20N60SFDTUF085* FGH20N60SFDTU TO247 Tube 30 *Qualified to Automotive Requirements of AECQ101 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 600 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 250 A, V = V 4.0 4.6 6.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 20 A, V = 15 V 2.2 2.8 V CE(sat) C GE I = 20 A, V = 15 V, T = 125C 2.4 V C GE C DYNAMIC CHARACTERISTICS Input Capacitance C V = 30 V, V = 0 V, f = 1 MHz 985 pF ies CE GE Output Capacitance C 110 pF oes Reverse Transfer Capacitance C 40 pF res www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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