IGBT - Field Stop, Trench 1200 V, 25 A FGH25N120FTDS Description Using advanced field stop trench technology, ON Semiconductors 1200 V trench IGBTs offer the optimum performance for hard www.onsemi.com switching application such as solar inverter, UPS, welder and PFC applications. C Features High Speed Switching Low Saturation Voltage: V =1.60 V I = 25 A CE(sat) C G High Input Impedance These Device is PbFree and is RoHS Compliant E Applications Solar Inverter, UPS, Welder, PFC G C E TO2473 CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH25N120 FTDS Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH25N120FTDS = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: February, 2020 Rev. 3 FGH25N120FTDS/DFGH25N120FTDS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Description Symbol Rating Unit Collector to Emitter Voltage V 1200 V CES Gate to Emitter Voltage V 25 V GES Collector Current T = 25C I 50 A C C Collector Current T = 100C 25 A C Pulsed Collector Current I (Note 1) 75 A CM Diode Forward Current T = 25C I 50 A C F Diode Forward Current T = 100C 25 A C Diode Maximum Forward Current I 75 A FM P Maximum Power Dissipation T = 25C 313 W C D Maximum Power Dissipation T = 100C 125 W C Operating Junction Temperature T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case R (IGBT) 0.4 C/W JC Thermal Resistance, Junction to Case R (Diode) 1.25 C/W JC Thermal Resistance, Junction to Ambient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH25N120FTDS FGH25N120FTDS TO247 Tube N/A N/A 30 (PbFree) ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 1200 V CES GE C Collector CutOff Current I V = V , V = 0 V 1 mA CES CE CES GE GE Leakage Current I V = V , V = 0 V 250 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 25 mA, V = V 3.5 6 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 25 A, V = 15 V 1.6 2 V CE(sat) C GE I = 25 A, V = 15 V, T = 125C 1.92 V C GE C www.onsemi.com 2