IGBT - Field Stop 600 V, 20 A FGH20N60UFD Description Using novel field stop IGBT Technology, ON Semiconductors field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage: V = 1.8 V I = 20 A CE(sat) C High Input Impedance G Fast Switching This Device is PbFree and is RoHS Compliant E Applications Solar Inverter, UPS, Welder, PFC E C ABSOLUTE MAXIMUM RATINGS GG Rating Symbol Value Unit Collector to Emitter Voltage V 600 V CES Gate to Emitter Voltage V 20 V GES Transient Gate to Emitter Voltage 30 TO2473LD Collector Current I A C CASE 340CK TC = 25C 40 TC = 100C 20 MARKING DIAGRAM Pulsed Collector Current I A CM TC = 25C (Note 1) 60 Diode Forward Current I A F Y&Z&3&K TC = 25C 20 TC = 100C 10 FGH20N60 UFD Pulsed Diode Maximum Forward I 60 A FM Current (Note 1) Maximum Power Dissipation P W D TC = 25C 165 TC = 100C 66 Operating Junction Temperature T 55 to + 150 C J Y = ON Semiconductor Logo Storage Temperature Range T 55 to + 150 C stg &Z = Assembly Plant Code &3 = Numeric Date Code Maximum Lead Temperature T 300 C L for Soldering, 1/8 from Case &K = Lot Code for 5 Seconds FGH20N60UFD = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 2 of 1. Repetitive rating: Pulse width limited by max. junction temperature. this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: February, 2020 Rev. 2 FGH20N60UFD/DFGH20N60UFD THERMAL CHARACTERISTICS Parameter Symbol Typ. Max. Unit Thermal Resistance JunctiontoCase, for IGBT R 0.76 C/W JC Thermal Resistance JunctiontoCase, for Diode R 2.51 C/W JC Thermal Resistance JunctiontoAmbient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH20N60UFDTU FGH20N60UFD TO247 Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV 600 V V = 0 V, I = 250 A CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 250 A, V = V 4.0 5.0 6.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 20 A, V = 15 V 1.8 2.4 V CE(sat) C GE I = 20 A, V = 15 V, T = 125C 2.0 V C GE C DYNAMIC CHARACTERISTICS Input Capacitance C V = 30 V, V = 0 V, f = 1 MHz 940 pF ies CE GE Output Capacitance C 110 pF oes Reverse Transfer Capacitance C 40 pF res SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 400 V, I = 20 A, 13 ns d(on) CC C R = 10 V = 15 V, G GE Rise Time t 17 ns r Inductive Load, T = 25C C TurnOff Delay Time t 87 ns d(off) Fall Time t 32 64 ns f TurnOn Switching Loss E 0.38 mJ on TurnOff Switching Loss E 0.26 mJ off Total Switching Loss E 0.64 mJ ts TurnOn Delay Time t V = 400 V, I = 20 A, 13 ns d(on) CC C R = 10 V = 15 V, G GE Rise Time t 16 ns r Inductive Load, T = 125C C TurnOff Delay Time t 92 ns d(off) Fall Time t 63 ns f TurnOn Switching Loss E 0.41 mJ on TurnOff Switching Loss E 0.36 mJ off Total Switching Loss E 0.77 mJ ts Total Gate Charge Q V = 400 V, I = 20 A, V = 15 V 63 nC g CE C GE Gate to Emitter Charge Q 7 nC ge Gate to Collector Charge Q 32 nC gc www.onsemi.com 2