IGBT - Field Stop, Trench
1200 V, 40 A
FGH12040WD
Description
Using novel field stop IGBT technology, ON Semiconductors new
nd
series of field stop 2 generation IGBTs offer the optimum
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performance for welder applications where low conduction
and switching losses are essential.
C
Features
Maximum Junction Temperature: T =175C
J
Positive Temperature Coefficient for Easy Parallel Operating
G
Low Saturation Voltage: V = 2.3 V (Typ.) @ I = 40 A
CE(sat) C
100% of the Parts Tested for I (Note 1)
LM
E
Short Circuit Ruggedness > 5 us @ 150C
High Input Impedance
This Device is PbFree and is RoHS Compliant
E
C
Applications G
Only for Welder
TO247
long leads
CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K
FGH12040
WD
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH12040WD = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2014
1 Publication Order Number:
April, 2020 Rev. 4 FGH12040WDF155/DFGH12040WD
ABSOLUTE MAXIMUM RATINGS
Symbol Description FGH75T65SHDTL4 Unit
V Collector to Emitter Voltage 1200 V
CES
V Gate to Emitter Voltage 25 V
GES
Transient Gate to Emitter Voltage 30 V
I Collector Current T = 25C 80 A
C C
T = 100C 40 A
C
I (Note 1) Clamped Inductive Load Current T = 25C 100 A
LM C
I (Note 2) Pulsed Collector Current 100 A
CM
I Diode Continuous Forward Current T = 25C 80 A
F C
Diode Continuous Forward Current T = 100C 40 A
C
I (Note 2) Diode Maximum Forward Current 100 A
FM
SCWT(Note 3) Short Circuit Withstand Time T = 150C 5 us
C
P Maximum Power Dissipation T = 25C 428 W
D C
T = 100C 214 W
C
T Operating Junction Temperature 55 to +175 C
J
T Storage Temperature Range 55 to +175 C
STG
T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 600 V, V = 15 V, I = 100 A, R = 23 , Inductive Load.
CC GE C G
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. V = 600 V, V = 12 V
CC GE
THERMAL CHARACTERISTICS
Symbol Parameter FGH75T65SHDTL4 Unit
Thermal Resistance, Junction to Case 0.35
R (IGBT) C/W
JC
R (Diode) Thermal Resistance, Junction to Case 1.4 C/W
JC
R Thermal Resistance, Junction to Ambient 40 C/W
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number Top Mark Package Reel Size Tape Width Quantity
FGH12040WDF155 FGH12040WD TO247 Tube 30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted)
C
Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BV Collector to Emitter Breakdown Voltage V = 0 V, I = 250 uA 1200 V
CES GE C
BV / T Temperature Coefficient of Breakdown Voltage V = 0 V, I = 250 uA 1.2 V/C
CES J GE C
uA
I Collector CutOff Current V = V , V = 0 V 250
CES CE CES GE
I GE Leakage Current V = V , V = 0 V 400 nA
GES GE GES CE
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2