FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085
FGB3040G2-F085 / FGD3040G2- F085
FGP3040G2-F085 / FGI3040G2-F085
EcoSPARK 2 300mJ, 400V, N-Channel Ignition IGBT
Features Applications
o
SCIS Energy = 300mJ at T = 25 C Automotive lgnition Coil Driver Circuits
J
Logic Level Gate Drive Coil On Plug Applications
Qualified to AEC Q101
RoHS Compliant
Package
Symbol
JEDEC TO-263AB JEDEC TO-220AB
D-Pak E
C
G
COLLECTOR
G
E
R
1
GATE
JEDEC TO-262AA
JEDEC TO-252AA
E
D-Pak R
C 2
G
G
EMITTER
E
COLLECTOR
(FLANGE)
Device Maximum Ratings T = 25C unless otherwise noted
A
Symbol Parameter Ratings Units
BV Collector to Emitter Breakdown Voltage (I = 1mA) 400 V
CER C
BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10mA) 28 V
ECS C
E Self Clamping Inductive Switching Energy (Note 1) 300 mJ
SCIS25
E Self Clamping Inductive Switching Energy (Note 2) 170 mJ
SCIS150
I Collector Current Continuous, at V = 5.0V, T = 25C 41 A
C25 GE C
I Collector Current Continuous, at V = 5.0V, T = 110C 25.6 A
C110 GE C
V Gate to Emitter Voltage Continuous 10 V
GEM
Power Dissipation Total, at T = 25C 150 W
C
P
D o o
Power Dissipation Derating, for T > 25C1W/ C
C
o
T Operating Junction Temperature Range -55 to +175 C
J
o
T Storage Junction Temperature Range -55 to +175 C
STG
o
T Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 C
L
o
T Reflow soldering according to JESD020C 260 C
PKG
HBM-Electrostatic Discharge Voltage at100pF, 1500 4kV
ESD
CDM-Electrostatic Discharge Voltage at 1 2kV
@2014 Semiconductor Components Industries, LLC. Publication Order Number:
August-2017, Rev. 3 FGB3040G2-F085/DFGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
330mm
FGB3040G2 FGB3040G2-F085 TO-263AB 24mm 800
TO-252AA 330mm
FGD3040G2 FGD3040G2-F085 16mm 2500
TO-220AB Tube N/A 50
FGP3040G2-F085
FGP3040G2
FGI3040G2
FGI3040G2-F085 TO-262AA Tube N/A 50
Electrical Characteristics T = 25C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I = 2mA, V = 0,
CE GE
BV Collector to Emitter Breakdown Voltage R = 1K , 370 400 430 V
CER GE
o
T = -40 to 150 C
J
I = 10mA, V = 0V,
CE GE
BV Collector to Emitter Breakdown Voltage R = 0, 390 420 450 V
CES GE
o
T = -40 to 150 C
J
I = -20mA, V = 0V,
CE GE
BV Emitter to Collector Breakdown Voltage 28 - - V
ECS
T = 25C
J
BV Gate to Emitter Breakdown Voltage I = 2mA 12 14 - V
GES GES
o
T = 25C- - 25 A
V = 250V, R = 1K
J
CE GE
I Collector to Emitter Leakage Current
CER
o
T = 150C- - 1 mA
J
o
T = 25 C - - 1
V = 24V,
J
EC
I Emitter to Collector Leakage Current mA
ECS
o
T = 150C- - 40
J
R Series Gate Resistance - 120 -
1
R Gate to Emitter Resistance 10K - 30K
2
On State Characteristics
o
V Collector to Emitter Saturation Voltage I = 6A, V = 4V, T = 25 C - 1.15 1.25 V
CE(SAT) CE GE J
o
V Collector to Emitter Saturation Voltage I = 10A, V = 4.5V, T = 150 C - 1.35 1.50 V
CE(SAT) CE GE J
o
V Collector to Emitter Saturation Voltage I = 15A, V = 4.5V, T = 150 C - 1.68 1.85 V
CE(SAT) CE GE J
L = 3.0 mHy,RG = 1K ,
E Self Clamped Inductive Switching TJ = 25C - - 300 mJ
SCIS
VGE = 5V, (Note 1)
Thermal Characteristics
o
R Thermal Resistance Junction to Case - - 1 C/W
JC
Notes:
1: Self Clamping Inductive Switching Energy (E ) of 300 mJ is based on the test conditions that starting
SCIS25
o
Tj=25 C; L=3mHy, I =14.2A,V =100V during inductor charging and V =0V during the time in clamp.
SCIS CC CC
2: Self Clamping Inductive Switching Energy (E ) of 170 mJ is based on the test conditions that starting
SCIS150
o
Tj=150 C; L=3mHy, I =10.8A,V =100V during inductor charging and V =0V during the time in clamp.
SCIS CC CC
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