X-On Electronics has gained recognition as a prominent supplier of J211-D74Z RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. J211-D74Z RF JFET Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

J211-D74Z ON Semiconductor

J211-D74Z electronic component of ON Semiconductor
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See Product Specifications
Part No.J211-D74Z
Manufacturer: ON Semiconductor
Category: RF JFET Transistors
Description: RF JFET Transistors NCh RF Transistor
Datasheet: J211-D74Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1225 ea
Line Total: USD 0.12 
Availability - 181
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7760
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 250
Multiples : 250
250 : USD 0.1527
2000 : USD 0.1402
4000 : USD 0.1381
6000 : USD 0.1361
10000 : USD 0.1312
26000 : USD 0.1293
50000 : USD 0.1264
100000 : USD 0.1245

181
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1225

   
Manufacturer
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Packaging
Hts
Pcb Changed
Package Height
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Package Width
Mounting
Lead Shape
Type
Configuration
Channel Type
Number Of Elements Per Chip
Maximum Gate Source Voltage V
Typical Forward Transconductance S
Maximum Power Dissipation Mw
Minimum Operating Temperature °C
Maximum Operating Temperature °C
Automotive
Supplier Package
Standard Package Name
Pin Count
Military
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We are delighted to provide the J211-D74Z from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the J211-D74Z and other electronic components in the RF JFET Transistors category and beyond.

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J211 / MMBFJ211 N-Channel RF Amplifier J211 / MMBFJ211 N-Channel RF Amplifier Description This device is designed for HF/VHF mixer/amplifier and applications where process 50 is not adequate. Sufficient gain and low-noise for sensitive receivers. Sourced from process 90. G TO-92 S 1. Drain Note: Source & Drain SOT-23 2. Source D are interchangeable 1 1 3. Gate 2 3 2 3 Straight Lead Bent Lead Bulk Packing Tape & Reel Ammo Packing Figure 1. J211 Device Package Figure 2. MMBFJ211 Device Package Ordering Information Part Number Top Mark Package Packing Method J211-D74Z J211 TO-92 3L Ammo MMBFJ211 62W SOT-23 3L Tape and Reel 1997 Semiconductor Components Industries, LLC. Publication Order Number: J211-D74Z/D September-2017, Rev. 2J211 / MMBFJ211 N-Channel RF Amplifier (1), (2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Drain-Gate Voltage 25 V DG V Gate-Source Voltage -25 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 to 150 C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty-cycle operations. Thermal Characteristics Values are at T = 25C unless otherwise noted. A Max. Symbol Parameter Unit (3) (3) J211 MMBFJ211 Total Device Dissipation 350 225 mW P D Derate Above 25C 2.8 1.8 mW/C R Thermal Resistance, Junction-to-Case 125 C/W JC R Thermal Resistance, Junction-to-Ambient 357 556 C/W JA Note: 2 . 3. Device mounted on FR-4 PCB 36mm 18mm 1.5mm; mounting pad for the collector lead minimum 6cm Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit Off Characteristics V Gate-Source Breakdown Voltage I = 1.0 A, V = 0 -25 V (BR)GSS G DS I Gate Reverse Current V = 15 V, V = 0 -100 pA GSS GS DS V (off) Gate-Source Cut-Off Voltage V = 15 V, I = 1.0 nA -2.5 -4.5 V GS DS D On Characteristics (4) I Zero-Gate Voltage Drain Current V = 15 V, V = 0 7.0 20 mA DSS DS GS Small Signal Characteristics Common Source Forward V = 15 V, V = 0, DS GS g 7000 12000 mhos fs Transconductance f = 1.0 kHz Common Source Output V = 15 V, V = 0, DS GS g 200 mhos oss Conductance f = 1.0 kHz Note: 4. Pulse test: pulse width 300 s www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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