JAN2N3019 ON Semiconductor

2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features MILPRF 19500/391 Qualified 2N3019, 2N3019S, 2N3700 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 30 mAdc) 80 C EmitterBase Cutoff Current I EBO (V = 5.0 Vdc) 10 nAdc EB (V = 7.0 Vdc) 10 Adc EB CollectorEmitter Cutoff Current I CEO (V = 90 Vdc) 10 nAdc CE CollectorBase Cutoff Current I CBO (V = 140 Vdc) 10 Adc CB ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 50 300 C CE (I = 10 mAdc, V = 10 Vdc) 90 C CE (I = 150 mAdc, V = 10 Vdc) 100 300 C CE (I = 500 mAdc, V = 10 Vdc) 50 300 C CE (I = 1.0 Adc, V = 10 Vdc) 15 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.2 C B (I = 500 mAdc, I = 50 mAdc) 0.5 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 1.1 C B SMALLSIGNAL CHARACTERISTICS Magnitude of SmallSignal Current Gain h fe (I = 50 mAdc, V = 10 Vdc, f = 20 MHz) 5.0 20 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 5 Vdc, f = 1 kHz) 80 400 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, 100 kHz f 1.0 MHz) 12 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, 100 kHz f 1.0 MHz) 60 EB C Noise Figure NF dB (V = 10 Vdc, I = 100 Adc, R = 1 k , PBW = 200 Hz) 4.0 CE C g CollectorBase Time Constant r ,C ps b C (V = 10 Vdc, I = 10 mAdc, f = 79.8 MHz) 400 CB C SWITCHING CHARACTERISTICS Pulse Response t + t ns on off (Reference Figure in MILPRF19500/391) 30 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.