2N2905A Small Signal Switching Transistor PNP Silicon 2N2905A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 10 mAdc) 60 C CollectorEmitter Cutoff Current I Adc CES (V = 60 Vdc) 1.0 CE CollectorBase Cutoff Current I CBO (V = 50 Vdc) 10 nAdc CB (V = 60 Vdc) 10 Adc CB EmitterBase Cutoff Current I EBO (V = 5.0 Vdc) 10 Adc EB (V = 3.5 Vdc) 50 nAdc EB ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 75 C CE (I = 1.0 mAdc, V = 10 Vdc) 100 450 C CE (I = 10 mAdc, V = 10 Vdc) 100 C CE (I = 150 mAdc, V = 10 Vdc) 100 300 C CE (I = 500 mAdc, V = 10 Vdc) 50 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 1.6 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 1.3 C B (I = 500 mAdc, I = 50 mAdc) 2.6 C B SMALLSIGNAL CHARACTERISTICS Magnitude of Small Signal Current Gain h fe (I = 50 mAdc, V = 20 Vdc, f = 100 MHz) 2.0 C CE Small Signal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1 kHz) 100 C CE Output Capacitance (V = 10 Vdc, I = 0, 100 kHz f 1.0 MHz) C 8.0 pF CB E obo Input Capacitance (V = 2.0 Vdc, I = 0, 100 kHz f 1.0 MHz) C 30 pF EB C ibo SWITCHING CHARACTERISTICS TurnOn Time t 45 ns on (Reference Figure in MILPRF19500/290) Turn Off Time t 300 ns off (Reference Figure in MILPRF19500/290) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.