X-On Electronics has gained recognition as a prominent supplier of JAN2N2222A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JAN2N2222A Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JAN2N2222A ON Semiconductor

JAN2N2222A electronic component of ON Semiconductor
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Part No.JAN2N2222A
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT
Datasheet: JAN2N2222A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 4.8211 ea
Line Total: USD 24.11 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 5
Multiples : 5
5 : USD 4.8211
25 : USD 4.1879
50 : USD 4.0906
100 : USD 3.9567
250 : USD 3.8592

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Dc Current Gain Hfe Max
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JAN2N2222A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN2N2222A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 50 Vdc CEO Collector-Base Voltage V 75 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current I 800 mAdc C TO-18 (TO-206AA) Total Power Dissipation @ T = +25C P 0.5 W 2N2221A, 2N2222A A T Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient 2N2221A, L 2N2222A, L 325 R C/W JA 2N2221AUA 2N2222AUA 210 4 PIN 2N2221AUB, UBC 2N2222AUB, UBC 325 2N2221AUA, 2N2222AUA Note: Consult 19500/255 for thermal performance curves. 1. Derate linearly 3.08mW/C above T > +37.5C A 2. Derate linearly 4.76mW/C above T > +63.5C A ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 50 Vdc (BR)CEO I = 10mAdc 3 PIN C 2N2221AUB, 2N2222AUB Collector-Base Cutoff Current 2N2221AUBC, 2N2222AUBC V = 75Vdc I 10 Adc CB CBO (UBC = Ceramic Lid Version) V = 60Vdc 10 Adc CB Emitter-Base Cutoff Current V = 6.0Vdc I 10 Adc EB EBO V = 4.0Vdc 10 EB Adc Collector-Emitter Cutoff Current I 50 Adc CES V = 50Vdc CE T4-LDS-0060 Rev. 2 (100247) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 I = 1.0mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 35 150 C CE 2N2222A, L, UA, UB, UBC 75 325 I = 10mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 C CE h FE 2N2222A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 120 C CE 2N2222A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 20 C CE 2N2222A, L, UA, UB, UBC 30 Collector-Emitter Saturation Voltage V Vdc I = 150mAdc, I = 15mAdc CE(sat) 0.3 C B I = 500mAdc, I = 50mAdc 1.0 C B Base-Emitter Voltage V Vdc BE(sat) I = 150mAdc, I = 15mAdc 0.6 1.2 C B I = 500mAdc, I = 50mAdc 2.0 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Short-Circuit Forward Current Transfer Ratio h fe I = 1.0mAdc, V = 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 Magnitude of SmallSignal Short-Circuit Forward Current Transfer Ratio |h | fe I = 20mAdc, V = 20Vdc, f = 100MHz 2.5 C CE Output Capacitance C 8.0 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 25 pF ibo V = 0.5Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 35 s on See figure 8 of MIL-PRF-19500/255 Turn-Off Time t 300 s off See Figure 9 of MIL-PRF-19500/255 (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0060 Rev. 2 (100247) Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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