X-On Electronics has gained recognition as a prominent supplier of JAN2N2222A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JAN2N2222A Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JAN2N2222A Microchip

JAN2N2222A electronic component of Microchip
JAN2N2222A Microchip
JAN2N2222A Bipolar Transistors - BJT
JAN2N2222A  Semiconductors

Images are for reference only
See Product Specifications
Part No. JAN2N2222A
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: JAN2N2222A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.6935 ea
Line Total: USD 2.69 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1
Multiples : 1
1 : USD 5.0067
10 : USD 4.5515
50 : USD 3.1204
250 : USD 2.7567
500 : USD 2.616
1000 : USD 2.5925
2500 : USD 2.569
5000 : USD 2.5338

0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1
Multiples : 1
1 : USD 2.6935
10 : USD 2.2012
100 : USD 2.1828
500 : USD 2.1391

0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 11
Multiples : 11
11 : USD 2.3376
25 : USD 2.2441
100 : USD 2.2441
250 : USD 2.2441
1000 : USD 2.2441

0
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 1
Multiples : 1
1 : USD 5.0193
10 : USD 4.9107
30 : USD 4.8365
100 : USD 4.764

0
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 6.1418

0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 20
Multiples : 10
20 : USD 4.2382
50 : USD 3.9927
250 : USD 3.7309
500 : USD 3.6327
1000 : USD 3.4854

0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3
Multiples : 1
3 : USD 2.5015

0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 20
Multiples : 10
20 : USD 4.2382
50 : USD 3.9927
250 : USD 3.7309
500 : USD 3.6327
1000 : USD 3.4854

   
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We are delighted to provide the JAN2N2222A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN2N2222A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 50 Vdc CEO Collector-Base Voltage V 75 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current I 800 mAdc C TO-18 (TO-206AA) Total Power Dissipation T = +25C P 0.5 W 2N2221A, 2N2222A A T Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient 2N2221A, L 2N2222A, L 325 R C/W JA 2N2221AUA 2N2222AUA 210 4 PIN 2N2221AUB, UBC 2N2222AUB, UBC 325 2N2221AUA, 2N2222AUA Note: Consult 19500/255 for thermal performance curves. 1. Derate linearly 3.08mW/C above T > +37.5C A 2. Derate linearly 4.76mW/C above T > +63.5C A ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 50 Vdc (BR)CEO I = 10mAdc 3 PIN C 2N2221AUB, 2N2222AUB Collector-Base Cutoff Current 2N2221AUBC, 2N2222AUBC V = 75Vdc I 10 Adc CB CBO (UBC = Ceramic Lid Version) V = 60Vdc 10 Adc CB Emitter-Base Cutoff Current V = 6.0Vdc I 10 Adc EB EBO V = 4.0Vdc 10 EB Adc Collector-Emitter Cutoff Current I 50 Adc CES V = 50Vdc CE T4-LDS-0060 Rev. 2 (100247) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 I = 1.0mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 35 150 C CE 2N2222A, L, UA, UB, UBC 75 325 I = 10mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 C CE h FE 2N2222A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 120 C CE 2N2222A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 20 C CE 2N2222A, L, UA, UB, UBC 30 Collector-Emitter Saturation Voltage V Vdc I = 150mAdc, I = 15mAdc CE(sat) 0.3 C B I = 500mAdc, I = 50mAdc 1.0 C B Base-Emitter Voltage V Vdc BE(sat) I = 150mAdc, I = 15mAdc 0.6 1.2 C B I = 500mAdc, I = 50mAdc 2.0 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Short-Circuit Forward Current Transfer Ratio h fe I = 1.0mAdc, V = 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 Magnitude of SmallSignal Short-Circuit Forward Current Transfer Ratio h fe I = 20mAdc, V = 20Vdc, f = 100MHz 2.5 C CE Output Capacitance C 8.0 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 25 pF ibo V = 0.5Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 35 s on See figure 8 of MIL-PRF-19500/255 Turn-Off Time t 300 s off See Figure 9 of MIL-PRF-19500/255 (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0060 Rev. 2 (100247) Page 2 of 6

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