X-On Electronics has gained recognition as a prominent supplier of JAN2N2222A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JAN2N2222A Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JAN2N2222A Microchip

JAN2N2222A electronic component of Microchip
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Part No.JAN2N2222A
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: JAN2N2222A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.7818 ea
Line Total: USD 2.78 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 5.1709
10 : USD 4.7007
50 : USD 3.2227
250 : USD 2.8471
500 : USD 2.7018
1000 : USD 2.6775
2500 : USD 2.6532
5000 : USD 2.6169

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 2.7818
10 : USD 2.2734
100 : USD 2.2544
500 : USD 2.2093

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 11
Multiples : 11
11 : USD 2.4143
25 : USD 2.3177
100 : USD 2.3177
250 : USD 2.3177
1000 : USD 2.3177

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 5.0193
10 : USD 4.9108
30 : USD 4.8365
100 : USD 4.764

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 6.3432

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 10
20 : USD 4.3771
50 : USD 4.1236
250 : USD 3.8532
500 : USD 3.7518
1000 : USD 3.5997

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 2.5835

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 10
20 : USD 4.3771
50 : USD 4.1236
250 : USD 3.8532
500 : USD 3.7518
1000 : USD 3.5997

   
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Collector-Emitter Voltage
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Collector Current Dc
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We are delighted to provide the JAN2N2222A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN2N2222A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 50 Vdc CEO Collector-Base Voltage V 75 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current I 800 mAdc C TO-18 (TO-206AA) Total Power Dissipation T = +25C P 0.5 W 2N2221A, 2N2222A A T Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient 2N2221A, L 2N2222A, L 325 R C/W JA 2N2221AUA 2N2222AUA 210 4 PIN 2N2221AUB, UBC 2N2222AUB, UBC 325 2N2221AUA, 2N2222AUA Note: Consult 19500/255 for thermal performance curves. 1. Derate linearly 3.08mW/C above T > +37.5C A 2. Derate linearly 4.76mW/C above T > +63.5C A ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 50 Vdc (BR)CEO I = 10mAdc 3 PIN C 2N2221AUB, 2N2222AUB Collector-Base Cutoff Current 2N2221AUBC, 2N2222AUBC V = 75Vdc I 10 Adc CB CBO (UBC = Ceramic Lid Version) V = 60Vdc 10 Adc CB Emitter-Base Cutoff Current V = 6.0Vdc I 10 Adc EB EBO V = 4.0Vdc 10 EB Adc Collector-Emitter Cutoff Current I 50 Adc CES V = 50Vdc CE T4-LDS-0060 Rev. 2 (100247) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 I = 1.0mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 35 150 C CE 2N2222A, L, UA, UB, UBC 75 325 I = 10mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 C CE h FE 2N2222A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 120 C CE 2N2222A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 20 C CE 2N2222A, L, UA, UB, UBC 30 Collector-Emitter Saturation Voltage V Vdc I = 150mAdc, I = 15mAdc CE(sat) 0.3 C B I = 500mAdc, I = 50mAdc 1.0 C B Base-Emitter Voltage V Vdc BE(sat) I = 150mAdc, I = 15mAdc 0.6 1.2 C B I = 500mAdc, I = 50mAdc 2.0 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Short-Circuit Forward Current Transfer Ratio h fe I = 1.0mAdc, V = 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 Magnitude of SmallSignal Short-Circuit Forward Current Transfer Ratio h fe I = 20mAdc, V = 20Vdc, f = 100MHz 2.5 C CE Output Capacitance C 8.0 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 25 pF ibo V = 0.5Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 35 s on See figure 8 of MIL-PRF-19500/255 Turn-Off Time t 300 s off See Figure 9 of MIL-PRF-19500/255 (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0060 Rev. 2 (100247) Page 2 of 6

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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