SMAJ33Ae3/TR13 Microchip

SMAJ5.0e3 to SMAJ440CAe3 400W Transient Voltage Suppressor (TVS) protection device Main product characteristics V 5.0V 440V WM RoHS V - V 6.40V 543V BR(min) BR(max) COMPLIANT I 41.7A 0.6A PP V 9.6V 713V CL(MAX) DO-214AC (SMA) P 400W PP Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands and special applications. RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020) Qualified to automotive grade AEC Q101 Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions. (1) Maximum ratings and characteristics Symbol Parameter Value Unit (2)(3) P Peak power dissipation with a 10/1000s waveform (fig.1) 400 W PPM (2) I Peak pulse current with a 10/1000s waveform (fig. 3) See next table A PPM Steady state power dissipation at T = 75C, lead lengths 0.375 L P 1.0 W M(AV) (3) (9.5mm) Non repetitive peak forward surge current I 40 A FSM (4) (8.3ms single half sine wave) unidirectional only Maximum instantaneous forward voltage at 25A for unidirectional V (5) 3.5 / 5.0 V F only R Typical thermal resistance junction to lead 30 C/W JL R Typical thermal resistance junction to ambient 120 C/W JA T Storage temperature -55 to +150 C STG T Junction temperature -55 to +150 C J (1) All ratings at 25C unless specified otherwise (2) Non-repetitive current pulse, per Fig. 3 and derated above T = 25C per Fig. 2. rating is 300W above 78V. A (3) Mounted on copper pad area of 0.2 x 0.2 (5.0mm x 5.0mm) (4) Mounted on minimum recommended pad layout (5) V =3.5V for devices of V < 220V and V =5.0V maximum for devices of V > 220V F BR F BR Copyright 2010 1/6 www.Microsemi.com Mar Rev C SMAJ5.0e3 to SMAJ440CAe3 400W Transient Voltage Suppressor (TVS) protection device (1) Electrical characteristics BREAKDOWN Device (2) MAXIMUM MAXIMUM PEAK MAXIMUM TEST VOLTAGE , V STAND-OFF BR marking code STANDBY PULSE CLAMPING DEVICE CURRENT I VOLTAGE V (4) (3) V (V) I (mA) T WM BR T CURRENT I CURRENT I VOLTAGE V (V) D PP C (V) (mA) (A) V (A) I WM PP Min Max UNI BI MAD MWD 6.40 7.82 10 5.0 800 41.7 9.6 SMAJ5.0e3 / SMAJ5.0Ce3 (5) 800 SMAJ5.0Ae3 / SMAJ5.0CAe3 MAE MWE 6.40 7.07 10 5.0 43.5 9.2 MAF MWF 6.67 8.15 10 6.0 800 35.1 11.4 SMAJ6.0e3 / SMAJ6.0Ce3 10 800 SMAJ6.0Ae3 / SMAJ6.0CAe3 MAG MWG 6.67 7.37 6.0 38.8 10.3 SMAJ6.5e3 / SMAJ6.5Ce3 MAH MWH 7.22 8.82 10 6.5 500 32.5 12.3 MAK MWK 7.22 7.98 10 6.5 500 35.7 11.2 SMAJ6.5Ae3 / SMAJ6.5CAe3 10 SMAJ7.0e3 / SMAJ7.0Ce3 MAL MWL 7.78 9.51 7.0 200 30.1 13.3 MAM MWM 7.78 8.60 10 7.0 200 33.3 12.0 SMAJ7.0Ae3 / SMAJ7.0CAe3 SMAJ7.5e3 / SMAJ7.5Ce3 MAN MWN 8.33 10.2 1.0 7.5 100 28.0 14.3 SMAJ7.5Ae3 / SMAJ7.5CAe3 MAP MWP 8.33 9.21 1.0 7.5 100 31.0 12.9 SMAJ8.0e3 / SMAJ8.0Ce3 MAQ MWQ 8.89 10.9 1.0 8.0 50 26.7 15.0 SMAJ8.0Ae3 / SMAJ8.0CAe3 MAR MWR 8.89 9.83 1.0 8.0 50 29.4 13.6 MAS MWS 9.44 11.5 1.0 8.5 10 25.2 15.9 SMAJ8.5e3 / SMAJ8.5Ce3 SMAJ8.5Ae3 / SMAJ8.5CAe3 MAT MWT 9.44 10.4 1.0 8.5 10 27.8 14.4 MAU MWU 10.0 12.2 1.0 9.0 5.0 23.7 16.9 SMAJ9.0e3 / SMAJ9.0Ce3 SMAJ9.0Ae3 / SMAJ9.0CAe3 MAV MWV 10.0 11.1 1.0 9.0 5.0 26.0 15.4 MAW MWW 11.1 13.6 1.0 10 1.0 21.3 18.8 SMAJ10e3 / SMAJ10Ce3 SMAJ10Ae3 / SMAJ10CAe3 MAX MWX 11.1 12.3 1.0 10 1.0 23.5 17.0 SMAJ11e3 / SMAJ11Ce3 MAY MWY 12.2 14.9 1.0 11 1.0 19.9 20.1 MAZ MWZ 12.2 13.5 1.0 11 1.0 22.0 18.2 SMAJ11Ae3 / SMAJ11CAe3 SMAJ12e3 / SMAJ12Ce3 MBD MXD 13.3 16.3 1.0 12 1.0 18.2 22.0 MBE MXE 13.3 14.7 1.0 12 1.0 20.1 19.9 SMAJ12Ae3 / SMAJ12CAe3 SMAJ13e3 / SMAJ13Ce3 MBF MXF 14.4 17.6 1.0 13 1.0 16.8 23.8 MBG MXG 14.4 15.9 1.0 13 1.0 18.6 21.5 SMAJ13Ae3 / SMAJ13CAe3 SMAJ14e3 / SMAJ14Ce3 MBH MXH 15.6 19.1 1.0 14 1.0 15.5 25.8 SMAJ14Ae3 / SMAJ14CAe3 MBK MXK 15.6 17.2 1.0 14 1.0 17.2 23.2 MBL MXL 16.7 20.4 1.0 15 1.0 14.9 26.9 SMAJ15e3 / SMAJ15Ce3 SMAJ15Ae3 / SMAJ15CAe3 MBM MXM 16.7 18.5 1.0 15 1.0 16.4 24.4 MBN MXN 17.8 21.8 1.0 16 1.0 13.9 28.8 SMAJ16e3 / SMAJ16Ce3 SMAJ16Ae3 / SMAJ16CAe3 MBP MXP 17.8 19.7 1.0 16 1.0 15.4 26.0 SMAJ17e3 / SMAJ17Ce3 MBQ MXQ 18.9 23.1 1.0 17 1.0 13.1 30.5 SMAJ17Ae3 / SMAJ17CAe3 MBR MXR 18.9 20.9 1.0 17 1.0 14.5 27.6 SMAJ18e3 / SMAJ18Ce3 MBS MXS 20.0 24.4 1.0 18 1.0 12.4 32.2 MBT MXT 20.0 22.1 1.0 18 1.0 13.7 29.2 SMAJ18Ae3 / SMAJ18CAe3 SMAJ20e3 / SMAJ20Ce3 MBU MXU 22.2 27.1 1.0 20 1.0 11.2 35.8 MBV MXV 22.2 24.5 1.0 20 1.0 12.3 32.4 SMAJ20Ae3 / SMAJ20CAe3 SMAJ22e3 / SMAJ22Ce3 MBW MXW 24.4 29.8 1.0 22 1.0 10.2 39.4 MBX MXX 24.4 26.9 1.0 22 1.0 11.3 35.5 SMAJ22Ae3 / SMAJ22CAe3 (1) All ratings at 25C unless specified otherwise (2) V measured after I applied for 300s, I =square wave pulse or equivalent BR T T (3) Surge current waveform per Fig.3 and derated per Fig.2 (4) For bidrectional types with V of 10 volts and less, the I limit is doubled WM D (5) For the bidirectional SMAJ5.0CA, the maximum V is 7.25V BR Copyright 2010 2/6 www.Microsemi.com Mar Rev C