ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features Description NPT Trench Technology, Positive Temperature Coefficient Using ON Semiconductor s proprietary trench design and Low Saturation Voltage: V = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers CE(sat), typ I = 25 A and T = 25C superior conduction and switching performances, high C C avalanche ruggedness and easy parallel operation. This Low Switching Loss: E = 0.96 mJ off, typ device is well suited for the reso-nant or soft switching I = 25 A and T = 25C C C application such as induction heating, microwave oven. Extremely Enhanced Avalanche Capability Applications Induction Heating, Microwave Oven CC GG TO-3P G C E EE Absolute Maximum Ratings Symbol Description Ratings Unit V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage 20 V GES Collector Current T = 25C 50 A C I C Collector Current T = 100C 25 A C I Pulsed Collector Current 90 A CM (1) Diode Continuous Forward Current T = 25C 50 A C I F Diode Continuous Forward Current T = 100C 25 A C I Diode Maximum Forward Current 150 A FM Maximum Power Dissipation T = 25C 312 W C P D Maximum Power Dissipation T = 100C 125 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering T 300 C L Purposes, 1/8 from case for 5 seconds Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit R (IGBT) Thermal Resistance, Junction-to-Case -- 0.4 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 2.0 C/W JC R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA Publication Order Number: 2006 Semiconductor Components Industries, LLC. FGA25N120ANTDTU/D October-2017,Rev.3