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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT April 2013 FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features Field Stop Trench Technology General Description High Speed Switching Using advanced field stop trench technology, Fairchilds Low Saturation Voltage: V = 1.6 V I = 30 A CE(sat) C 1200V trench IGBTs offer superior conduction and switching High Input Impedance performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche rug- gedness. This device is designed for induction heating and microwave oven. Applications Solar Inverter, UPS, Welder, PFC C G TO-3P E G C E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 1200 V CES V Gate to Emitter Voltage 25 V GES o Collector Current T = 25 C 60 A C I C o Collector Current T = 100 C 30 A C o I Pulsed Collector Current 90 A CM (1) T = 25 C C o 30 A I Diode Continuous Forward Current T = 100 C F C o Maximum Power Dissipation T = 25 C 339 W C P D o Maximum Power Dissipation T = 100 C 132 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 0.38 C/W JC o R (Diode) Thermal Resistance, Junction to Case - 1.2 C/W JC 2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH30N120FTD Rev. C0