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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA40T65UQDF 650 V, 40 A Field Stop Trench IGBT May 2016 FGA40T65UQDF 650 V, 40 A Field Stop Trench IGBT Features General Description o Maximum Junction Temperature: T = 175 C Using novel field stop IGBT technology, Fairchilds new series of J th field stop 4 generation IGBTs offer superior conduction and Positive Temperature Co-efficient for Easy Parallel Operating switching performance and easy parallel operation. This device High Current Capability is well suited for the resonant or soft switching application such Low Saturation Voltage: V = 1.33 V ( Typ.) I = 40 A CE(sat) C as induction heating and MWO. 100% of the Parts tested for I (1) LM High Input Impedance Applications Fast Switching Induction Heating, MWO Tighten Parameter Distribution RoHS Compliant C G G C TO-3PN E E Absolute Maximum Ratings Symbol Description FGA40T65UQDF Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V o Collector Current T = 25 C 80 A C I C o Collector Current T = 100 C 40 A C o I (1) Pulsed Collector Current T = 25 C 120 A LM C I (2) Pulsed Collector Current 120 A CM o Diode Forward Current T = 25 C 40 A C I F o Diode Forward Current T = 100 C 20 A C I Pulsed Diode Maximum Forward Current 60 A FM o Maximum Power Dissipation T = 25 C 231 W C P D o Maximum Power Dissipation T = 100 C 115 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1. V = 400 V, V = 15 V, I = 120 A, R = 20 , Inductive Load CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature 2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA40T65UQDF Rev. 1.0