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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA50N100BNTD2 1000 V NPT Trench IGBT November 2013 FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description High Speed Switching Using Fairchild s proprietary trench design and advanced NPT Low Saturation Voltage : V = 2.5 V I = 60 A technology, the 1000V NPT IGBT offers superior conduction CE(sat) C High Input Impedance and switching performances, high avalanche ruggedness and Built-in Fast Recovery Diode easy parallel operation. This device offers the optimum perfor- RoHS Compliant mance for hard switching application such as UPS, welder applications. Applications UPS, Welder C G TO-3P G C E E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 1000 V CES V Gate to Emitter Voltage 25 V GES o Collector Current T = 25C50 A C I C o Collector Current T = 100C35 A C I Pulsed Collector Current 200 A CM (1) o Diode Continuous Forward Current 30 A T = 25 C C I F o Diode Continuous Forward Current 15 A T = 100 C C I Diode Maximum Forward Current 150 A FM o Maximum Power Dissipation T = 25 C 156 W C P D o Maximum Power Dissipation T = 100C63 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1: Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 0.8 C/W JC o R (DIODE) Thermal Resistance, Junction to Case - 1.2 C/W JC o R Thermal Resistance, Junction to Ambient - 40.0 C/W JA 2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA50N100BNTD2 Rev. C1