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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA40T65SHD 650 V, 40 A Field Stop Trench IGBT December 2014 FGA40T65SHD 650 V, 40 A Field Stop Trench IGBT Features General Description o Maximum Junction Temperature : T =175 C Using novel field stop IGBT technology, Fairchilds new series of J rd field stop 3 generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operating for solar inverter, UPS, welder, telecom, ESS and PFC applica- High Current Capability tions where low conduction and switching losses are essential. Low Saturation Voltage: V =1.6 V(Typ.) I = 40 A CE(sat) C 100% of the Parts Tested for I (1) LM Applications High Input Impedance Solar Inverter, UPS, Welder, Telecom, ESS, PFC Fast Switching Tighten Parameter Distribution RoHS Compliant C G G C TO-3PN E E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description FGA40T65SHD Unit V Collector to Emitter Voltage 650 V CES Gate to Emitter Voltage 20 A V GES Transient Gate to Emitter Voltage 30 A o Collector Current T = 25 C 80 A C I C o Collector Current T = 100 C 40 A C o I Pulsed Collector Current T = 25 C 120 A LM (1) C I Pulsed Collector Current 120 A CM (2) o Diode Forward Current T = 25 C 40 A C I F o Diode Forward Current T = 100 C 20 A C I Pulsed Diode Maximum Forward Current 120 A FM (2) o Maximum Power Dissipation T = 25 C 268 W C P D o Maximum Power Dissipation T = 100 C 134 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1. V = 400 V, V = 15 V, I =120 A, R = 30 Inductive Load CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature 2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA40T65SHD Rev. C2