AUIRG4PH50S Infineon

AUTOMOTIVE GRADE C V = 1200V CES I = 81A T = 100C C C Standard: Optimized for minimum saturation G voltage and low operating frequencies (< 1kHz) V typ. = 1.47V 33A CE(on) Generation 4 IGBT design provides tighter E parameter distribution and higher efficiency n-channel Industry standard TO-247AC package Lead-Free Automotive Qualified * Generation 4 IGBT s offer highest efficiency available IGBT s optimized for specified application conditions TO-247AC G C E Gate Collector Emitter Standard Pack Base part number Package Type Complete Part Number Form Quantity AUIRG4PH50S TO-247AC Tube 25 AUIRG4PH50S Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under ) is 25 C, unless otherwise specified. board mounted and still air conditions. Ambient temperature (T A Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V 141 I T = 25C Continuous Collector Current C C I T = 100C Continuous Collector Current 81 C C A I Pulse Collector Current, V = 15V 99 CM GE I Clamped Inductive Load Current, V = 20V 99 LM GE VGE Continuous Gate-to-Emitter Voltage 20 V Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 543 D C W P T = 100C Maximum Power Dissipation 217 D C T Operating Junction and J -55 to +150 TSTG Storage Temperature Range C Soldering Temperature, for 10 sec. (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case (IGBT) R JC (IGBT) 0.23 R CS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 C/W Thermal Resistance, Junction-to-Ambient R JA 40 *Qualification standards can be found at Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 1.2 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C 1.47 1.7 I = 33A, V = 15V, T = 25C C GE J VCE(on) Collector-to-Emitter Saturation Voltage V 1.55 IC = 33A, VGE = 15V, TJ = 150C VGE(th) Gate Threshold Voltage 3.0 6.0 V VCE = VGE, IC = 250A V /TJ Threshold Voltage temp. coefficient -11 mV/C V = V , I = 250A (25C - 150C) GE(th) CE GE C gfe Forward Transconductance 30 S V = 50V, I = 33A, PW = 20s CE C ICES Collector-to-Emitter Leakage Current 250 VGE = 0V, VCE = 1200V, TJ = 25C A 1000 V = 0V, V = 1200V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units Q Total Gate Charge (turn-on) 151 227 I = 33A g C Q Gate-to-Emitter Charge (turn-on) 26 39 nC V = 15V ge GE Qgc Gate-to-Collector Charge (turn-on) 62 93 VCC = 600V IC = 33A, VCC = 600V, VGE = 15V E Turn-Off Switching Loss 15 16 off mJ R = 5, L = 400H, T = 25C G J Energy losses include tail t Turn-Off delay time 485 616 I = 33A, V = 600V, V = 15V d(off) C CC GE ns tf Fall time 1193 1371 RG = 5, L = 400H, TJ = 25C IC = 33A, VCC = 600V, VGE = 15V Eoff Turn-Off Switching Loss 29 mJ R = 5, L = 400H, T = 150C G J Energy losses include tail td(off) Turn-Off delay time 689 IC = 33A, VCC = 600V, VGE = 15V ns tf Fall time 2462 RG = 5, L = 400H, TJ = 150C C Input Capacitance 3804 V = 0V ies GE C Output Capacitance 161 pF V = 30V oes CC C Reverse Transfer Capacitance 31 f = 1.0Mhz res TJ = 150C, IC = 99A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC Rg = 5, V = +20V to 0V GE Notes: V = 80% (V ), V = 20V, L = 400H, R = 50. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.