Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A FGY120T65SPD-F085 Features www.onsemi.com Very Low Saturation Voltage : V = 1.5 V(Typ.) I = 120 A CE(sat) C Maximum Junction Temperature : T = 175 C J C Positive Temperature Coefficient Tight Parameter Distribution High Input Impedance 100% of the Parts are Dynamically Tested G Short Circuit Ruggedness > 6 s 25 C Copacked with Soft, Fast Recovery Extremefast Diode E AECQ101 Qualified and PPAP Capable This is a PbFree Device Benefits Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications G C Rugged Transient Reliability E Outstanding Parallel Operation Performance with Balance Current TO2473LD Sharing CASE 340CU Low EMI MARKING DIAGRAM Applications Traction Inverter for HEV/EV Y&Z&3&K Auxiliary DC/AC Converter FGY120T Motor Drives 65SPD Other Powertrain Applications Requiring High Power Switch Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FGY120T65SPD= Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2020 Rev. 3 FGY120T65SPDF085/DFGY120T65SPD F085 ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Units V Collector to Emitter Voltage 650 V CES VG 20 ES Gate to Emitter Voltage V 30 Transient Gate to Emitter Voltage V I C Collector Current (Note 1) T = 25C 240 A C Collector Current T = 100C 220 A C I Nominal Current 120 A Nominal I Pulsed Collector Current 378 A CM I F Diode Forward Current (Note 1) T = 25C 240 A C Diode Forward Current T = 100C 188 A C P D Maximum Power Dissipation T = 25C 882 W C Maximum Power Dissipation T = 100C 441 W C s SCWT Short Circuit Withstand Time T = 25C 6 C dV/dt Voltage Transient Ruggedness (Note 2) 10 V/ns T Operating Junction Temperature 55 to +175 C J C T Storage Temperature Range 55 to +175 stg T Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 s 300 C L 1. Limited by bondwire 2. V = 400 V, V = 15 V, I = 378 A, Inductive Load CC GE CE THERMAL CHARACTERISTICS Symbol Parameter Typ. Max. Units C/W R (IGBT) Thermal Resistance, Junction to Case 0.17 JC C/W R (Diode) Thermal Resistance, Junction to Case 0.32 JC C/W R Thermal Resistance, Junction to Ambient 40 JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Pacing Type Qty per Tube FGY120T65SPD FGY120T65SPDF085 TP247 Tube 30ea www.onsemi.com 2