X-On Electronics has gained recognition as a prominent supplier of IKQ75N120CT2XKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKQ75N120CT2XKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKQ75N120CT2XKSA1 Infineon

IKQ75N120CT2XKSA1 electronic component of Infineon
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Part No.IKQ75N120CT2XKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 1200V; 75A; 237W; TO247-3
Datasheet: IKQ75N120CT2XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 21.0924 ea
Line Total: USD 21.09 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 240
Multiples : 240
240 : USD 12.7244

   
Manufacturer
Product Category
Power Dissipation
Technology
Technology
Mounting
Case
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
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We are delighted to provide the IKQ75N120CT2XKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKQ75N120CT2XKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IKQ75N120CT2 TM TRENCHSTOP 2 low Vce(sat) second generation IGBT Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fast ce(sat) recovery full current rated anti-parallel Emitter Controlled Diode C Features: TRENCHSTOP 2 technology offers: Very low VCE(sat), 1.75V at nominal current 10sec short circuit withstand time at T =175C vj Easy paralleling capability due to positive temperature G coefficient in VCE(sat) E Low EMI Very soft, fast recovery full current anti-parallel diode Maximum junction temperature 175C Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models: IKQ75N120CT2 TM TRENCHSTOP 2 low Vce(sat) second generation IGBT Table of Contents Description 1 Table of Contents . 2 Maximum Ratings . 3 Thermal Resistance . 3 Electrical Characteristics 4 Electrical Characteristics Diagrams . 6 Package Drawing .13 Testing Conditions 14 Revision History 15 Disclaimer .16 Datasheet 2 V 2.3 2019-04-15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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