NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. NGTB25N120FLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.65 C/W JC Thermal resistance junctiontocase, for Diode R 1.5 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 25 A V 1.55 2.0 2.2 V GE C CEsat V = 15 V, I = 25 A, T = 150C 2.2 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 250 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 150C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES short circuited DYNAMIC CHARACTERISTIC Input capacitance C 5200 pF ies Output capacitance C 144 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 94 res Gate charge total Q 220 nC g Gate to emitter charge V = 600 V, I = 25 A, V = 15 V Q 40 ge CE C GE Gate to collector charge Q 98 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 91 ns d(on) Rise time t 26 r Turn off delay time t 228 d(off) T = 25C J V = 600 V, I = 25 A CC C Fall time t 160 f R = 10 g V = 0 V/ 15V Turnon switching loss E 1.50 mJ GE on Turn off switching loss E 0.95 off Total switching loss E 2.45 ts Turnon delay time t 88 ns d(on) Rise time t 28 r Turn off delay time t 240 d(off) T = 125C J V = 600 V, I = 25 A CC C Fall time t 270 f R = 10 g V = 0 V/ 15V Turnon switching loss GE E 1.8 mJ on Turn off switching loss E 1.6 off Total switching loss E 3.4 ts