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X-On Electronics has gained recognition as a prominent supplier of NGTB30N120L2WG IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NGTB30N120L2WG IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

NGTB30N120L2WG ON Semiconductor

NGTB30N120L2WG electronic component of ON Semiconductor
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See Product Specifications
Part No.NGTB30N120L2WG
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors 1200V/30A LOW VCE SAT FSII
Datasheet: NGTB30N120L2WG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.602 ea
Line Total: USD 8.6 
Availability - 62
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
62
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 8.602
10 : USD 7.139
30 : USD 7.084
120 : USD 7.073
420 : USD 6.743
1050 : USD 6.413
2520 : USD 6.248
5040 : USD 6.204

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NGTB30N120L2WG from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NGTB30N120L2WG and other electronic components in the IGBT Transistors category and beyond.

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NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. NGTB30N120L2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.85 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 30 A V 1.70 1.90 V GE C CEsat V = 15 V, I = 30 A, T = 175C 2.07 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 1.0 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited pF Input capacitance C 7500 ies Output capacitance C 200 V = 20 V, V = 0 V, f = 1 MHz CE GE oes Reverse transfer capacitance C 140 res nC Gate charge total Q 310 g Gate to emitter charge Q 61 V = 600 V, I = 30 A, V = 15 V CE C GE ge Gate to collector charge Q 150 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 116 ns d(on) Rise time t 35 r Turnoff delay time t 285 T = 25C d(off) J V = 600 V, I = 30 A CC C Fall time t 175 f R = 10 g V = 0 V/ 15V Turnon switching loss E 4.4 mJ GE on Turnoff switching loss E 1.4 off Total switching loss E 5.8 ts Turnon delay time t 110 ns d(on) Rise time t 36 r Turnoff delay time t 300 T = 175C d(off) J V = 600 V, I = 30 A CC C Fall time t 331 f R = 10 g V = 0 V/ 15V mJ Turnon switching loss E 5.5 GE on Turnoff switching loss E 2.5 off Total switching loss E 8.0 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 30 A V 1.50 1.70 V GE F F V = 0 V, I = 30 A, T = 175C 1.40 GE F J Reverse recovery time T = 25C t 450 ns J rr I = 30 A, V = 400 V F R Reverse recovery charge Q 7.85 c rr di /dt = 200 A/ s F Reverse recovery current I 32 A rrm

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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