NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. NGTB30N120L2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.85 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 30 A V 1.70 1.90 V GE C CEsat V = 15 V, I = 30 A, T = 175C 2.07 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 1.0 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited pF Input capacitance C 7500 ies Output capacitance C 200 V = 20 V, V = 0 V, f = 1 MHz CE GE oes Reverse transfer capacitance C 140 res nC Gate charge total Q 310 g Gate to emitter charge Q 61 V = 600 V, I = 30 A, V = 15 V CE C GE ge Gate to collector charge Q 150 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 116 ns d(on) Rise time t 35 r Turnoff delay time t 285 T = 25C d(off) J V = 600 V, I = 30 A CC C Fall time t 175 f R = 10 g V = 0 V/ 15V Turnon switching loss E 4.4 mJ GE on Turnoff switching loss E 1.4 off Total switching loss E 5.8 ts Turnon delay time t 110 ns d(on) Rise time t 36 r Turnoff delay time t 300 T = 175C d(off) J V = 600 V, I = 30 A CC C Fall time t 331 f R = 10 g V = 0 V/ 15V mJ Turnon switching loss E 5.5 GE on Turnoff switching loss E 2.5 off Total switching loss E 8.0 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 30 A V 1.50 1.70 V GE F F V = 0 V, I = 30 A, T = 175C 1.40 GE F J Reverse recovery time T = 25C t 450 ns J rr I = 30 A, V = 400 V F R Reverse recovery charge Q 7.85 c rr di /dt = 200 A/ s F Reverse recovery current I 32 A rrm