Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT NGTB30N60L2WG Electrical Characteristics at Ta = 25C, Unless otherwise specified Value Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V( ) I =500A, V=0V 600 V BR CES C GE Tc=25C 10 A Collector to Emitter Cut off Current I V =600V, V =0V CES CE GE Tc=150C 1mA Gate to Emitter Leakage Current I V =20V, V =0V 100 nA GES GE CE Gate to Emitter Threshold Voltage V(th) V =20V, I =250A 4.5 6.5V GE CE C Tc=25C 1.4 1.6 V V =15V, I =30A GE C Collector to Emitter Saturation Voltage V ( ) Tc=150C 1.7 V CE sat V =15V, I=50A Tc=25C 1.65 V GE C Diode Forward Voltage V I=30A 1.7 V F F Input Capacitance Cies 4130 pF Output Capacitance Coes V =20V, f=1MHz 114 pF CE Reverse Transfer Capacitance Cres 96 pF Turn-ON Delay Time t (on) 100 ns d Rise Time t 60 ns r V =300V, I =30A Turn-ON Time CC C ton 540 ns R =30, L=200H G Turn-OFF Delay Time t(off) 390 ns d V =0V/15V GE Fall Time t 80 ns f Vclamp=400V Turn-OFF Time toff 500 ns See Fig.1, See Fig.2 Turn-ON Energy Eon 0.31 mJ Turn-OFF Energy Eoff 1.14 mJ Turn-ON Delay Time t (on) 98 ns d Rise Time t 85 ns r V =300V, I =50A Turn-ON Time CC C ton 650 ns R =30, L=200H G Turn-OFF Delay Time t(off) 380 ns d V =0V/15V GE Fall Time t 90 ns f Vclamp=400V Turn-OFF Time toff 530 ns See Fig.1, See Fig.2 Turn-ON Energy Eon 0.638 mJ Turn-OFF Energy Eoff 2.755 mJ Total Gate Charge Qg 166 nC Gate to Emitter Charge Qge V =300V, V =15V, I =30A 40 nC CE GE C Gate to Collector Miller Charge Qgc 70 nC Diode Reverse Recovery Time t I =10A, di/dt=100A/s, V =50V, See Fig.3 70 ns rr F CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta = 25C, Unless otherwise specified Parameter Symbol Conditions Value Unit Tc=25C Thermal Resistance IGBT (Junction to Case) Rth(j-c) (IGBT) 0.67 C /W (Our ideal heat dissipation condition)*2 Tc=25C Thermal Resistance Diode (Junction to Case) Rth(j-c) (Diode) 1.5 C /W (Our ideal heat dissipation condition)*2 Thermal Resistance (Junction to Ambient) Rth(j-a) 41 C /W Note : *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. No.A2308-2/8