NGTB30N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low NGTB30N65IHL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.50 C/W JC Thermal resistance junctiontocase, for Diode R 1.46 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 650 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 30 A V 1.6 2.2 V GE C CEsat V = 15 V, I = 30 A, T = 175C 2.0 GE C J Gateemitter threshold voltage V = V , I = 150 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 650 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 650 V, T 175C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3200 pF ies Output capacitance C 130 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 85 res Gate charge total Q 135 nC g Gate to emitter charge Q 26 V = 480 V, I = 30 A, V = 15 V ge CE C GE Gate to collector charge Q 66 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 145 ns d(off) T = 25C J V = 400 V, I = 30 A CC C Fall time t 71 f R = 10 g V = 0 V/ 15V Turnoff switching loss GE E 0.2 mJ off Turnoff delay time t 151 ns d(off) T = 150C J V = 400 V, I = 30 A CC C Fall time t 94 f R = 10 g V = 0 V/ 15V Turnoff switching loss GE E 0.41 mJ off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 30 A V 1.1 1.3 V GE F F V = 0 V, I = 30 A, T = 175C 1.0 GE F J Reverse recovery time T = 25C t 430 ns J rr I = 30 A, V = 200 V F R Reverse recovery charge Q 7700 nc rr di /dt = 200 A/ s F Reverse recovery current I 35 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.