IRG4IBC20FDPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Very Low 1.66V votage drop V = 600V CES 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink V = 1.66V CE(on) typ. Fast: Optimized for medium operating G frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). V = 15V, I = 9.0A GE C E TM IGBT co-packaged with HEXFRED ultrafast, n-channel ultrasoft recovery antiparallel diodes Tighter parameter distribution TM Industry standard Isolated TO-220 Fullpak outline Lead-Free Simplified assembly Highest efficiency and power density TM HEXFRED antiparallel Diode minimizes switching losses and EMI TO-220 FULLPAK Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 14.3 C C I T = 100C Continuous Collector Current 7.7 C C I Pulsed Collector Current 64 A CM I Clamped Inductive Load Current 64 LM I T = 100C Diode Continuous Forward Current 6.5 F C I Diode Maximum Forward Current 64 FM Visol RMS Isolation Voltage, Terminal to Case 2500 V V Gate-to-Emitter Voltage 20 GE P T = 25C Maximum Power Dissipation 34 D C P T = 100C Maximum Power Dissipation 14 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case - IGBT 3.7 JC R Junction-to-Case - Diode 5.1 C/W JC R Junction-to-Ambient, typical socket mount 65 JA Wt Weight 2.0 (0.07) g (oz) www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.72 V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 1.66 2.0 I = 9.0A V = 15V CE(on) C GE 2.06 V I = 16A See Fig. 2, 5 C 1.76 I = 9.0A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V / T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 2.9 5.1 S V = 100V, I = 9.0A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE 1700 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.4 1.7 V I = 8.0A See Fig. 13 FM C 1.3 1.6 I = 8.0A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 27 40 I = 9.0A g C Qge Gate - Emitter Charge (turn-on) 4.2 6.2 nC V = 400V See Fig. 8 CC Q Gate - Collector Charge (turn-on) 9.9 15 V = 15V gc GE t Turn-On Delay Time 43 T = 25C d(on) J t Rise Time 20 ns I = 9.0A, V = 480V r C CC t Turn-Off Delay Time 240 360 V = 15V, R = 50 d(off) GE G t Fall Time 150 220 Energy losses includetai and f E Turn-On Switching Loss 0.25 diode reverse recovery. on E Turn-Off Switching Loss 0.64 mJ See Fig. 9, 10, 18 off E Total Switching Loss 0.89 1.3 ts t Turn-On Delay Time 41 T = 150C, See Fig. 11, 18 d(on) J t Rise Time 22 ns I = 9.0A, V = 480V r C CC t Turn-Off Delay Time 320 V = 15V, R = 50 d(off) GE G t Fall Time 290 Energy losses includetai and f E Total Switching Loss 1.35 mJ diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 540 V = 0V ies GE C Output Capacitance 37 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 7.0 = 1.0MHz res t Diode Reverse Recovery Time 37 55 ns T = 25C See Fig. rr J 55 90 T = 125C 14 I = 8.0A J F I Diode Peak Reverse Recovery Current 3.5 5.0 A T = 25C See Fig. rr J 4.5 8.0 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 65 138 nC T = 25C See Fig. rr J 124 360 T = 125C 16 di/dt = 200As J di /dt Diode Peak Rate of Fall of Recovery 240 A/s T = 25C See Fig. (rec)M J During t 210 T = 125C 17 b J 2 www.irf.com