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X-On Electronics has gained recognition as a prominent supplier of IRG4IBC20FDPBF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IRG4IBC20FDPBF IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IRG4IBC20FDPBF Infineon

IRG4IBC20FDPBF electronic component of Infineon
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Part No.IRG4IBC20FDPBF
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors 600V Fast 1-8kHz
Datasheet: IRG4IBC20FDPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 1.3874 ea
Line Total: USD 69.37 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 50
Multiples : 50
50 : USD 1.3874
250 : USD 1.2383
700 : USD 1.167

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 50
Multiples : 50
50 : USD 1.8271
200 : USD 1.6503
500 : USD 1.5913

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Height
Length
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRG4IBC20FDPBF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRG4IBC20FDPBF and other electronic components in the IGBT Transistors category and beyond.

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IRG4IBC20FDPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Very Low 1.66V votage drop V = 600V CES 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink V = 1.66V CE(on) typ. Fast: Optimized for medium operating G frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). V = 15V, I = 9.0A GE C E TM IGBT co-packaged with HEXFRED ultrafast, n-channel ultrasoft recovery antiparallel diodes Tighter parameter distribution TM Industry standard Isolated TO-220 Fullpak outline Lead-Free Simplified assembly Highest efficiency and power density TM HEXFRED antiparallel Diode minimizes switching losses and EMI TO-220 FULLPAK Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 14.3 C C I T = 100C Continuous Collector Current 7.7 C C I Pulsed Collector Current 64 A CM I Clamped Inductive Load Current 64 LM I T = 100C Diode Continuous Forward Current 6.5 F C I Diode Maximum Forward Current 64 FM Visol RMS Isolation Voltage, Terminal to Case 2500 V V Gate-to-Emitter Voltage 20 GE P T = 25C Maximum Power Dissipation 34 D C P T = 100C Maximum Power Dissipation 14 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case - IGBT 3.7 JC R Junction-to-Case - Diode 5.1 C/W JC R Junction-to-Ambient, typical socket mount 65 JA Wt Weight 2.0 (0.07) g (oz) www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.72 V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 1.66 2.0 I = 9.0A V = 15V CE(on) C GE 2.06 V I = 16A See Fig. 2, 5 C 1.76 I = 9.0A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V / T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 2.9 5.1 S V = 100V, I = 9.0A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE 1700 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.4 1.7 V I = 8.0A See Fig. 13 FM C 1.3 1.6 I = 8.0A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 27 40 I = 9.0A g C Qge Gate - Emitter Charge (turn-on) 4.2 6.2 nC V = 400V See Fig. 8 CC Q Gate - Collector Charge (turn-on) 9.9 15 V = 15V gc GE t Turn-On Delay Time 43 T = 25C d(on) J t Rise Time 20 ns I = 9.0A, V = 480V r C CC t Turn-Off Delay Time 240 360 V = 15V, R = 50 d(off) GE G t Fall Time 150 220 Energy losses includetai and f E Turn-On Switching Loss 0.25 diode reverse recovery. on E Turn-Off Switching Loss 0.64 mJ See Fig. 9, 10, 18 off E Total Switching Loss 0.89 1.3 ts t Turn-On Delay Time 41 T = 150C, See Fig. 11, 18 d(on) J t Rise Time 22 ns I = 9.0A, V = 480V r C CC t Turn-Off Delay Time 320 V = 15V, R = 50 d(off) GE G t Fall Time 290 Energy losses includetai and f E Total Switching Loss 1.35 mJ diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 540 V = 0V ies GE C Output Capacitance 37 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 7.0 = 1.0MHz res t Diode Reverse Recovery Time 37 55 ns T = 25C See Fig. rr J 55 90 T = 125C 14 I = 8.0A J F I Diode Peak Reverse Recovery Current 3.5 5.0 A T = 25C See Fig. rr J 4.5 8.0 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 65 138 nC T = 25C See Fig. rr J 124 360 T = 125C 16 di/dt = 200As J di /dt Diode Peak Rate of Fall of Recovery 240 A/s T = 25C See Fig. (rec)M J During t 210 T = 125C 17 b J 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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