GT30J121(Q) Toshiba

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: t = 0.05 s (typ.) f Low switching loss : E = 1.00 mJ (typ.) on : E = 0.80 mJ (typ.) off Low saturation voltage: V = 2.0 V (typ.) CE (sat) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-emitter voltage V 600 V CES Gate-emitter voltage V 20 V GES DC I 30 C JEDEC Collector current A 1 ms I 60 CP JEITA Collector power dissipation P 170 W C TOSHIBA 2-16C1C (Tc = 25C) Junction temperature T 150 C Weight: 4.6 g (typ.) j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance R 0.735 C/W th (j-c) Marking TOSHIBA GT30J121 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT30J121 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 20 V, V = 0 500 nA GES GE CE Collector cut-off current I V = 600 V, V = 0 1.0 mA CES CE GE Gate-emitter cut-off voltage V I = 3 mA, V = 5 V 3.5 6.5 V GE (OFF) C CE Collector-emitter saturation voltage V I = 30 A, V = 15 V 2.0 2.45 V CE (sat) C GE Input capacitance C V = 10 V, V = 0, f = 1 MHz 4650 pF ies CE GE Turn-on delay time t 0.09 d (on) Rise time t 0.07 r Turn-on time t 0.24 on Inductive Load Switching time s Turn-off delay time t V = 300 V, I = 30 A 0.30 d (off) CC C V = +15 V, R = 24 GG G Fall time t 0.05 f (Note 1) Turn-off time t 0.43 off (Note 2) Turn-on switching E 1.00 on loss Switching loss mJ Turn-off switching E 0.80 off loss Note 1: Switching time measurement circuit and input/output waveforms V GE 90% GT30J324 10% 0 V GE I C L I V C CC 90% 90% R G V 10% 10% 10% 10% V CE CE 0 t t d (off) d (on) t f t r t t off on Note 2: Switching loss measurement waveforms V GE 90% 10% 0 I C V 5% CE 0 E E off on 2 2006-11-01