NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is NGTB30N120IHRWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase R 0.39 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 30 A V 2.20 2.50 V GE C CEsat V = 15 V, I = 30 A, T = 175C 2.40 GE C J Gateemitter threshold voltage V = V , I = 250 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 2.8 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES short circuited DYNAMIC CHARACTERISTIC Input capacitance C 5320 pF ies Output capacitance C 124 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 100 res Gate charge total Q 225 nC g Gate to emitter charge V = 600 V, I = 30 A, V = 15 V Q 36 ge CE C GE Gate to collector charge Q 98 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn off delay time t 230 ns d(off) T = 25C J V = 600 V, I = 30 A CC C Fall time t 133 f R = 10 g V = 0 V/ 15V Turn off switching loss E 0.70 mJ GE off Turn off delay time t 250 ns d(off) T = 150C J V = 600 V, I = 30 A CC C Fall time t 210 f R = 10 g V = 0 V/ 15V Turn off switching loss GE E 1.55 mJ off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 30 A V 1.90 2.35 V GE F F V = 0 V, I = 30 A, T = 175C 2.90 GE F J