NGTB25N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO2474L package that provides significant www.onsemi.com reduction in E Losses compared to standard TO2473L package. on The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with 25 A, 1200 V a low forward voltage. V = 2.0 V CEsat Features E = 0.99 mJ on Extremely Efficient Trench with Field Stop Technology T = 175C Jmax C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO2474L for Minimal E Losses on G Optimized for High Speed Switching This is a PbFree Devices E1 E Typical Applications Solar Inverters Uninterruptible Power Supplies (UPS) Neutral Point Clamp Topology ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit TO247 C CASE 340AR E Collectoremitter voltage V 1200 V CES 4 LEAD E1 G Collector current TC = 25C I 100 A C TC = 100C 25 MARKING DIAGRAM Pulsed collector current, T I 100 A pulse CM limited by T Jmax Diode forward current TC = 25C I 100 A F TC = 100C 25 25N120FL2 Diode pulsed current, T limited I 100 A pulse FM by T AYWWG Jmax Gateemitter voltage V 20 V GE Transient gateemitter voltage 30 (T = 5 s, D < 0.10) pulse Power Dissipation TC = 25C P 385 W D TC = 100C 192 25N120FL2 = Specific Device Code Operating junction temperature range T 55 to +175 C J A = Assembly Location Y = Year Storage temperature range T 55 to +175 C stg WW = Work Week Lead temperature for soldering, 1/8 T 260 C SLD G = PbFree Package from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping NGTB25N120FL2WAG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 0 NGTB25N120FL2WA/DNGTB25N120FL2WAG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.39 C/W JC Thermal resistance junctiontocase, for Diode R 0.64 C/W JC Thermal resistance junctiontoambient R 25 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 25 A V 2.00 2.40 V GE C CEsat V = 15 V, I = 25 A, T = 175C 2.40 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.4 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited Input capacitance C 4243 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 159 oes CE GE Reverse transfer capacitance C 77 res nC Gate charge total Q 181 g Gate to emitter charge V = 600 V, I = 25 A, V = 15 V Q 40 CE C GE ge Gate to collector charge Q 87 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 17 ns d(on) Rise time t 19 r Turnoff delay time t 113 T = 25C J d(off) V = 600 V, I = 50 A CC C Fall time t 118 f R = 10 g Turnon switching loss V = 15V E 0.99 mJ GE on Turnoff switching loss E 0.66 off Total switching loss E 1.65 ts Turnon delay time t 15 ns d(on) Rise time t 19 r Turnoff delay time t 120 T = 175C J d(off) V = 600 V, I = 50 A CC C Fall time t 193 f R = 10 g Turnon switching loss E 1.2 mJ V = 15V GE on Turnoff switching loss E 1.3 off Total switching loss E 2.5 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 25 A V 2.51 3.00 V GE F F V = 0 V, I = 25 A, T = 175C 2.60 GE F J T = 25C Reverse recovery time t 136 ns J rr I = 25 A, V = 400 V F R Reverse recovery charge Q 0.6 c rr di /dt = 250 A/ s F Reverse recovery current I 8.4 A rrm T = 175C Reverse recovery time t 251 ns J rr I = 25 A, V = 400 V F R Reverse recovery charge Q 1.91 c rr di /dt = 250 A/ s F Reverse recovery current I 14 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2