DATA SHEET www.onsemi.com IGBT - Ultra Field Stop 25 A, 1200 V V = 1.7 V CEsat NGTB25N120FL3WG E = 0.7 mJ off This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides C superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. G Features E Extremely Efficient Trench with Field Stop Technology T = 175C Jmax Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are PbFree Devices G Typical Applications C E Solar Inverter TO247 Uninterruptible Power Inverter Supplies (UPS) CASE 340AM Welding ABSOLUTE MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit Collectoremitter Voltage V 1200 V CES Collector Current I A C T = 25C 50 C 25N120FL3 T = 100C 25 C AYWWG Pulsed Collector Current, T I 100 A pulse CM Limited by T Jmax Diode Forward Current I A F T = 25C 50 C T = 100C 25 C Diode Pulsed Current, T Limited I 100 A pulse FM 25N120FL3 = Specific Device Code by T Jmax A = Assembly Location Y = Year Gateemitter Voltage V 20 V GE WW = Work Week Transient Gateemitter Voltage 30 G = PbFree Package (T = 5 s, D < 0.10) pulse Power Dissipation P W D T = 25C 349 C T = 100C 174 C ORDERING INFORMATION Operating Junction Temperature T 55 to +175 C J Device Package Shipping Range NGTB25N120FL3WG TO247 30 Units / Rail Storage Temperature Range T 55 to +175 C stg (PbFree) Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2021 Rev. 6 NGTB25N120FL3W/DNGTB25N120FL3WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.43 C/W JC Thermal resistance junctiontocase, for Diode R 0.78 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 25 A V 1.70 1.95 V GE C CEsat V = 15 V, I = 25 A, T = 175C 2.20 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.1 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 0.4 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC pF Input capacitance C 3085 ies Output capacitance C 94 V = 20 V, V = 0 V, f = 1 MHz CE GE oes Reverse transfer capacitance C 52 res nC Gate charge total Q 136 g Gate to emitter charge Q 29 V = 600 V, I = 25 A, V = 15 V ge CE C GE Gate to collector charge Q 67 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD ns Turnon delay time t 15 d(on) Rise time t 21 r Turnoff delay time t 109 T = 25C d(off) J V = 600 V, I = 25 A CC C Fall time t 131 f R = 10 g Turnon switching loss V = 15 V E 1.0 mJ GE on Turnoff switching loss E 0.7 off Total switching loss E 1.7 ts Turnon delay time t 15 ns d(on) Rise time t 21 r Turnoff delay time t 113 T = 150C d(off) J V = 600 V, I = 25 A CC C Fall time t 169 f R = 10 g V = 15 V mJ Turnon switching loss E 1.45 GE on Turnoff switching loss E 0.95 off Total switching loss E 2.4 ts DIODE CHARACTERISTICS Forward voltage V = 0 V, I = 25 A V 3.0 3.4 V GE F F V = 0 V, I = 25 A T 175C 2.8 GE F J = Reverse recovery time t 90 ns rr Reverse recovery charge Q 0.62 c rr T = 25C J I = 25 A, V = 600 V F R Reverse recovery current I 12 A rrm di /dt = 500 A/ s F Diode peak rate of fall of reverse recovery dI /dt 256 A/ s rrm current during tb www.onsemi.com 2