NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged copackaged free wheeling diode with a NGTB15N120LWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.545 C/W JC Thermal resistance junctiontocase, for Diode R 1.5 C/W JC Thermal resistance junctiontoambient R 60 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 15 A V 1.8 2.2 V GE C CEsat V = 15 V, I = 15 A, T = 150C 2.0 GE C J Gateemitter threshold voltage V = V , I = 150 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 150C 2.0 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3600 pF ies Output capacitance C 88 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 63 res Gate charge total Q 160 nC g Gate to emitter charge Q 30 V = 600 V, I = 15 A, V = 15 V ge CE C GE Gate to collector charge Q 73 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn-on delay time t 72 d(on) Rise time t 19 r ns T = 25C J Turn-off delay time t 165 d(off) V = 600 V, I = 15 A CC C R = 15 g Fall time t 200 f V = 0 V/ 15V GE Turn-on switching loss E 2.1 on mJ Turn-off switching loss E 0.56 off Turn-on delay time t 70 d(on) Rise time t 21 r ns T = 125C J Turn-off delay time t 175 d(off) V = 600 V, I = 15 A CC C R = 15 g Fall time t 260 f V = 0 V/ 15V GE Turn-on switching loss E 2.7 on mJ Turn-off switching loss E 1.0 off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 15 A V 1.4 1.6 V GE F F V = 0 V, I = 15 A, T = 150C 1.5 GE F J