NGTB15N60R2FG IGBT www.onsemi.com 600V, 14A, N-Channel Electrical Connection Features N-Channel Reverse Conducting II IGBT 2 IGBT V (sat)=1.85V typ. (I =15A, V =15V) CE C GE IGBT t =75ns typ. f Diode V =1.7V typ. (I =15A) F F Diode t =95ns typ. rr 1 10 s Short Circuit Capability 1:Gate 2:Collector 3:Emitter Applications 3 General Purpose Inverter Specifications Absolute Maximum Ratings at Ta = 25C, Unless otherwise specified Parameter Symbol Value Unit V Collector to Emitter Voltage V 600 CES V Gate to Emitter Voltage V 20 GES TO-220F-3FS 2 A Collector Current (DC) Tc=25C * 24 1 I C * 2 Limited by Tjmax Tc=100C * 14 A Collector Current (Peak) Marking I 60 A CP Pulse width Limited by Tjmax I 15A Diode Average Output Current O Power Dissipation P 54 W GTB15N D 2 Tc=25 C (Our ideal heat dissipation condition) * LOTNo. 60R2 Junction Temperature Tj 175 C Tstg 55 to +175 C Storage Temperature Note : *1 Collector Current is calculated from the following formula. Tjmax - Tc I (Tc)= C R (j-c)V (sat) (I (Tc)) th CE C *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number : December 2014 - Rev. 1 NGTB15N60R2FG/D NGTB15N60R2FG Electrical Characteristics at Ta = 25C, Unless otherwise specified Value Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V( ) I =500A, V=0V 600 V BR CES C GE Tc=25 C 10 A Collector to Emitter Cut off Current I V =600V, V =0V CES CE GE Tc=125C 1mA Gate to Emitter Leakage Current I V =20V, V=0V 100 nA GES GE CE Gate to Emitter Threshold Voltage V(th) V =20V, I =250A 4.5 7.0V GE CE C V =15V, I=15A Tc=25C 1.85 2.1 V GE C Collector to Emitter Saturation Voltage V ( ) CE sat V =15V, I=14A Tc=100C 2.0 2.3 V GE C Forward Diode Voltage V I=15A 1.7 2.1V F F Input Capacitance Cies 2000 pF Output Capacitance Coes V =20V, f=1MHz 65 pF CE Reverse Transfer Capacitance Cres 50 pF Turn-ON Delay Time t (on) 70 ns d Rise Time t 40 ns r V =300V, I =15A CC C Turn-ON Time ton 200 ns R =30, L=500 H G Turn-OFF Delay Time t(off) 190 ns d V =0V/15V GE Fall Time Vclamp=400V t 75 ns f Tc=25 C Turn-OFF Time toff 290 ns See Fig.1, See Fig.2 Turn-ON Energy Eon 550 J Turn-OFF Energy Eoff 220 J Total Gate Charge Qg 80 nC Gate to Emitter Charge Qge V =300V, V =15V, I =15A 16 nC CE GE C Gate to Collector Miller Charge Qgc 38 nC Diode Reverse Recovery Time t I =15A,di/dt=300A/s, V =300V, See Fig.3 95 ns rr F CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta = 25C, Unless otherwise specified Parameter Symbol Conditions Value Unit Tc=25 C Thermal Resistance IGBT (Junction to Case) Rth(j-c) (IGBT) 2.78 C/W 2 (Our ideal heat dissipation condition) * Thermal Resistance (Junction to Ambient) Rth(j-a) 69 C/W Note : *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. www.onsemi.com 2