NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low onstate voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. www.onsemi.com Features 20 A, 1200 V Extremely Efficient Trench with Fieldstop Technology V = 2.20 V CEsat Low Switching Loss Reduces System Power Dissipation E = 0.48 mJ off Optimized for Low Losses in IH Cooker Application This is a PbFree Device C Typical Applications Inductive Heating Consumer Appliances G Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage T = 25C V 1200 V J CES Collector current I A C TC = 25C 40 TC = 100C 20 Pulsed collector current, T limited I 80 A G pulse CM by T , 10 s Pulse, V = 15 V C Jmax GE TO247 E Diode forward current I A F CASE 340AL TC = 25C 40 TC = 100C 20 MARKING DIAGRAM Diode pulsed current, T limited I 80 A pulse FM by T , 10 s Pulse, V = 0 V Jmax GE Gateemitter voltage V 20 V GE Transient Gateemitter voltage 25 (T = 5 s, D < 0.10) pulse 20N120IH Power Dissipation P W AYWWG D TC = 25C 341 TC = 100C 170 Operating junction temperature range T 40 to +175 C J Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping NGTB20N120IHWG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2015 Rev. 1 NGTB20N120IHW/DNGTB20N120IHWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase R 0.44 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V 1200 V V = 0 V, I = 500 A GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 20 A V 2.20 2.65 V GE C CEsat V = 15 V, I = 20 A, T = 175C 2.30 GE C J Gateemitter threshold voltage V = V , I = 250 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.1 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 150C 2.8 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3590 pF ies Output capacitance C 90 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 70 res Gate charge total Q 150 nC g Gate to emitter charge Q 31 V = 600 V, I = 20 A, V = 15 V ge CE C GE Gate to collector charge Q 67 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 170 ns d(off) T = 25C J V = 600 V, I = 20 A CC C Fall time t 155 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.48 mJ GE off Turnoff delay time t 185 ns d(off) T = 150C J V = 600 V, I = 20 A CC C Fall time t 210 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.92 mJ GE off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 20 A V 2.2 2.75 V GE F F V = 0 V, I = 20 A, T = 175C 3.8 GE F J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2