Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Pb NGD18N40ACLB - 18 A, 400 V, N-Channel Ignition IGBT, DPAK Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug Applications DPAK Package Offers Smaller Footprint for Increased Board Space GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp 18 Amps, 400 Volts Limits Stress Applied to Load VCE(on) 2.0 V Integrated ESD Diode Protection IC = 10 A, VGE 4.5 V New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Maximum Ratings (TJ = 25C unless otherwise noted) Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices Rating Symbol Value Unit Low Saturation Voltage CollectorEmitter Voltage 430 V V CES DC High Pulsed Current Capability Optional Gate Resistor (R ) and GateEmitter Resistor G (R ) CollectorGate Voltage 430 V V GE CER DC Emitter Ballasting for ShortCircuit Capability These are PbFree Devices GateEmitter Voltage V 18 V GE DC Functional Diagram 15 A Collector CurrentContinuous DC I C TC = 25C Pulsed 50 A AC ESD (Human Body Model) R = 1500 , ESD 8.0 kV C = 100 pF ESD (Machine Model) R = 0 , C = ESD 800 V 200 pF 115 Total Power Dissipation TC = 25C W PD Derate above 25C W/C 0.77 Additional Information Operating and Storage Temperature 55 to T , T C J stg Range +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage Samples Datasheet Resources may occur and reliability may be affected. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Unclamped CollectorToEmitter Avalanche Characteristics (55T 150C) J Rating Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 5.0 V, P I = 21.1 A, L = 1.8 mH, Starting T = 25C 400 CC GE k L J V = 50 V, V = 5.0 V, P I = 16.2 A, L = 3.0 mH, Starting T = 25C E 400 mJ CC GE k L J AS V = 50 V, V = 5.0 V, P I = 18.3 A, L = 1.8 mH, Starting T = 125C 300 CC GE k L J Reverse Avalanche Energy V = 100 V, V = 20 V, P I = 25.8 A, L = 6.0 mH, Starting T = 25C E 2000 mJ CC GE k L J AS(R) Maximum Short-Circuit Times (55T 150C) J Rating Symbol Value Unit Short Circuit Withstand Time 1 750 s t (See Figure 17, 3 Pulses with 10 ms Period) sc1 Short Circuit Withstand Time 2 5.0 ms t (See Figure 18, 3 Pulses with 10 ms Period) sc2 Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 1.3 C/W JC Thermal Resistance, Junction to Ambient DPAK (Note 1) R 95 C/W JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 275 C 5 seconds L 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18