NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL UNCLAMPED COLLECTOR TOEMITTER AVALANCHE CHARACTERISTICS (55 T 175C) J Characteristic Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy E mJ AS V = 50 V, V = 5.0 V, Pk I = 16.6 A, L = 1.8 mH, Starting T = 25C 250 CC GE L J V = 50 V, V = 5.0 V, Pk I = 15 A, L = 1.8 mH, Starting T = 125C 200 CC GE L J THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 1.4 C/W JC Thermal Resistance, Junction to Ambient DPAK (Note 1) R 100 JA 2 D PAK (Note 1) R 50 JA TO220 R 62.5 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds T 275 C L ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Clamp Voltage BV I = 2.0 mA T = 40C to 380 410 440 V CES C J DC 150C I = 10 mA T = 40C to 380 410 440 C J 150C Zero Gate Voltage Collector Current I T = 25C 2.0 20 A CES J DC V = 350 V, CE T = 150C 10 40* J V = 0 V GE T = 40C 1.0 10 J Reverse CollectorEmitter Leakage Current I T = 25C 0.7 2.0 mA ECS J V = 24 V CE T = 150C 12 25* J T = 40C 0.1 1.0 J Reverse CollectorEmitter Clamp Voltage B T = 25C 27 33 37 V VCES(R) J DC I = 75 mA C T = 150C 30 36 40 J T = 40C 25 31 35 J GateEmitter Clamp Voltage BV I = 5.0 mA T = 40C to 11 13 15 V GES G J DC 150C GateEmitter Leakage Current I V = 10 V T = 40C to 384 640 1000 A GES GE J DC 150C Gate Resistor R T = 40C to 70 G J 150C Gate Emitter Resistor R T = 40C to 10 16 26 GE J k 150C ON CHARACTERISTICS (Note 2) T = 25C 1.1 1.4 1.9 Gate Threshold Voltage V V GE(th) J DC I = 1.0 mA, C T = 150C 0.75 1.0 1.4 J V = V GE CE T = 40C 1.2 1.6 2.1* J Threshold Temperature Coefficient 3.4 mV/C (Negative) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width 300 S, Duty Cycle 2%. *Maximum Value of Characteristic across Temperature Range.