NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, NChannel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses NGD8201N, NGD8201AN UNCLAMPED COLLECTOR TOEMITTER AVALANCHE CHARACTERISTICS (55 T 175C) J Characteristic Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy E mJ AS V = 50 V, V = 5.0 V, Pk I = 16.7 A, R = 1000 , L = 1.8 mH, Starting T = 25C 250 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 14.9 A, R = 1000 , L = 1.8 mH, Starting T = 150C 200 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 14.1 A, R = 1000 , L = 1.8 mH, Starting T = 175C 180 CC GE L G J Reverse Avalanche Energy E mJ AS(R) V = 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25C 2000 CC GE L J THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoCase R 1.2 C/W JC Thermal Resistance, JunctiontoAmbient (Note 1) R 95 C/W JA Maximum Temperature for Soldering Purposes, 1/8 from case for 5 seconds (Note 2) T 275 C L 1. When surface mounted to an FR4 board using the minimum recommended pad size (76x76x1.6mm board size, 60 sqmm 1 oz. Copper). 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Clamp Voltage BV I = 2.0 mA T = 40C to 175C 370 395 420 V CES C J I = 10 mA T = 40C to 175C 390 415 440 C J Zero Gate Voltage Collector Current I V = 0 V, V = 15 V T = 25C 0.1 1.0 A CES GE CE J T = 25C 0.5 1.5 10 A J V = 200 V, CE T = 175C 1.0 25 100* J V = 0 V GE T = 40C 0.4 0.8 5.0 J Reverse CollectorEmitter Clamp B T = 25C 30 35 39 V VCES(R) J Voltage T = 175C 35 39 45* I = 75 mA J C T = 40C 30 33 37 J Reverse CollectorEmitter Leakage I T = 25C 0.05 0.1 1.0 mA CES(R) J Current V = 24 V CE T = 175C 1.0 5.0 10 J NGD8201N T = 40C 0.005 0.01 0.1 J T = 25C 0.05 0.2 1.0 J V = 24 V CE T = 175C 1.0 8.5 25 J NGD8201AN T = 40C 0.005 0.025 0.2 J GateEmitter Clamp Voltage BV I = 5.0 mA T = 40C to 175C 12 12.5 14 V GES G J GateEmitter Leakage Current I V = 5.0 V T = 40C to 175C 200 300 350* A GES GE J Gate Resistor R T = 40C to 175C 70 G J GateEmitter Resistor R T = 40C to 175C 14.25 16 25 k GE J ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V T = 25C 1.5 1.8 2.1 V GE(th) J T = 175C 0.7 1.0 1.3 I = 1.0 mA, V = V J C GE CE T = 40C 1.7 2.0 2.3* J Threshold Temperature Coefficient 4.0 4.6 5.2 mV/C (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width 300 S, Duty Cycle 2%.