X-On Electronics has gained recognition as a prominent supplier of NGD8201ANT4G IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NGD8201ANT4G IGBT Transistors are a product manufactured by Littelfuse. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

NGD8201ANT4G Littelfuse

NGD8201ANT4G electronic component of Littelfuse
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Part No.NGD8201ANT4G
Manufacturer: Littelfuse
Category: IGBT Transistors
Description: IGBT Transistors NGD8201ANT4G GEN4 IGBT
Datasheet: NGD8201ANT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.6308 ea
Line Total: USD 1577 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.6308
25000 : USD 0.5957
250000 : USD 0.5375
1250000 : USD 0.5054
2500000 : USD 0.5051

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Factory Pack Quantity :
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We are delighted to provide the NGD8201ANT4G from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NGD8201ANT4G and other electronic components in the IGBT Transistors category and beyond.

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NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, NChannel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses NGD8201N, NGD8201AN UNCLAMPED COLLECTOR TOEMITTER AVALANCHE CHARACTERISTICS (55 T 175C) J Characteristic Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy E mJ AS V = 50 V, V = 5.0 V, Pk I = 16.7 A, R = 1000 , L = 1.8 mH, Starting T = 25C 250 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 14.9 A, R = 1000 , L = 1.8 mH, Starting T = 150C 200 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 14.1 A, R = 1000 , L = 1.8 mH, Starting T = 175C 180 CC GE L G J Reverse Avalanche Energy E mJ AS(R) V = 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25C 2000 CC GE L J THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoCase R 1.2 C/W JC Thermal Resistance, JunctiontoAmbient (Note 1) R 95 C/W JA Maximum Temperature for Soldering Purposes, 1/8 from case for 5 seconds (Note 2) T 275 C L 1. When surface mounted to an FR4 board using the minimum recommended pad size (76x76x1.6mm board size, 60 sqmm 1 oz. Copper). 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Clamp Voltage BV I = 2.0 mA T = 40C to 175C 370 395 420 V CES C J I = 10 mA T = 40C to 175C 390 415 440 C J Zero Gate Voltage Collector Current I V = 0 V, V = 15 V T = 25C 0.1 1.0 A CES GE CE J T = 25C 0.5 1.5 10 A J V = 200 V, CE T = 175C 1.0 25 100* J V = 0 V GE T = 40C 0.4 0.8 5.0 J Reverse CollectorEmitter Clamp B T = 25C 30 35 39 V VCES(R) J Voltage T = 175C 35 39 45* I = 75 mA J C T = 40C 30 33 37 J Reverse CollectorEmitter Leakage I T = 25C 0.05 0.1 1.0 mA CES(R) J Current V = 24 V CE T = 175C 1.0 5.0 10 J NGD8201N T = 40C 0.005 0.01 0.1 J T = 25C 0.05 0.2 1.0 J V = 24 V CE T = 175C 1.0 8.5 25 J NGD8201AN T = 40C 0.005 0.025 0.2 J GateEmitter Clamp Voltage BV I = 5.0 mA T = 40C to 175C 12 12.5 14 V GES G J GateEmitter Leakage Current I V = 5.0 V T = 40C to 175C 200 300 350* A GES GE J Gate Resistor R T = 40C to 175C 70 G J GateEmitter Resistor R T = 40C to 175C 14.25 16 25 k GE J ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V T = 25C 1.5 1.8 2.1 V GE(th) J T = 175C 0.7 1.0 1.3 I = 1.0 mA, V = V J C GE CE T = 40C 1.7 2.0 2.3* J Threshold Temperature Coefficient 4.0 4.6 5.2 mV/C (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width 300 S, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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