Ignition IGBT Surface Mount > 450V > NGD18N45CLB Pb NGD18N45CLB - 18 A, 450 V, N-Channel Ignition IGBT, DPAK Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug Applications DPAK Package Offers Smaller Footprint for Increased Board Space GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp 18 Amps, 450 Volts Limits Stress Applied to Load V (on) 2.1 V CE Low Threshold Voltage Interfaces Power Loads to Logic or I = 10 A, V 4.5 V C GE Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Maximum Ratings (T = 25C unless otherwise noted) J Emitter Ballasting for ShortCircuit Capability This is a PbFree Device Rating Symbol Value Unit CollectorEmitter Voltage V 500 V CES DC Functional Diagram GateGate Voltage V 500 V CER DC C GateEmitter Voltage V 18 V GE DC G R 18 A GE Collector CurrentContinuous DC I C T = 25C Pulsed C 50 A AC E ESD (Human Body Model) ESD 8.0 kV R = 1500 , C = 100 pF Additional Information ESD (Machine Model) ESD 400 V R = 0 , C = 200 pF 115 W Total Power Dissipation T = 25C Samples C Datasheet Resources P D Derate above 25C 0.77 W/C Operating and Storage 55 to T , T C J stg +175 Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Condi- tions may affect device reliability. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18Ignition IGBT Surface Mount > 450V > NGD18N45CLB Unclamped CollectorToEmitter Avalanche Characteristics (Note 2) Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy 338 V = 50 V, V = 5.0 V, P I = 26.0 A, R = 1000 , L = 1.0 mH, Starting T = 25C CC GE k L G J V = 50 V, V = 5.0 V, P I = 10.0 A, R = 1000 , L = 8.4 mH, Starting T = 25C 420 CC GE k L G J mJ E AS V = 50 V, V = 5.0 V, P I = 15.4 A, R = 1000 , L = 2.0 mH, Starting T = 150C 237 CC GE k L G J 247 V = 50 V, V = 5.0 V, P I = 5.7 A, R = 1000 , L = 15.2 mH, Starting T = 150C CC GE k L G J Thermal Characteristics Symbol Value Unit Thermal Resistance, Junction to Case R 1.3 JC C/W Thermal Resistance, Junction to Ambient DPAK (Note 1) R 95 JA Maximum Lead Temperature for Soldering Purposes, 1/8 T 275 C L from case for 5 seconds Maximum Short-Circuit Times Rating Symbol Value Unit Short Circuit Withstand Time Test 1 1000 S t (See Figure 17, 3 Pulses with 10 ms Period, Ta = 105C) sc1-1 Short Circuit Withstand Time Test 1 800 S t sc1-2 (See Figure 17, 3 Pulses with 10 ms Period, Ta = 150C) Short Circuit Withstand Time Test 2 t 5 ms sc2-1 (See Figure 18, 3 Pulses with 10 ms Period, Ta = 105C) Short Circuit Withstand Time Test 2 1 ms t sc2-2 (See Figure 18, 3 Pulses with 10 ms Period, Ta = 150C) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18