FF1800R17IP5P PrimePACK3+ B-Serien Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und bereits aufgetragenem Thermal Interface Material PrimePACK3+ B-series module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and pre-applied Thermal Interface Material V = 1700V CES IC nom = 1800A / ICRM = 3600A Potentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives Traktionsumrichter Traction drives Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended operating temperature T vj op vj op Hohe Stromdichte High current density Niedrige Schaltverluste Low switching losses Niedriges V Low V CEsat CEsat T = 175C T = 175C vj op vj op Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Last- und thermische Wechselfestigkeit High power and thermal cycling capability Hohe Leistungsdichte High power density Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.1 www.infineon.com 2020-08-21FF1800R17IP5P IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 38C, Tvj max = 175C ICDC 1800 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 3600 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 1800 A Tvj = 25C 1,75 2,20 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,10 2,65 V GE vj CE sat Tvj = 175C 2,30 2,90 V Gate-Schwellenspannung IC = 64,0 mA, VCE = VGE, Tvj = 25C VGEth 5,35 5,80 6,25 V Gate threshold voltage Gateladung V = -15 / 15 V, V = 900 V Q 9,00 C GE CE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,8 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 105 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 3,20 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V T = 125C I 10 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 1800 A, VCE = 900 V Tvj = 25C 0,31 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,33 s GE vj R = 0,56 T = 175C 0,34 s Gon vj Anstiegszeit, induktive Last IC = 1800 A, VCE = 900 V Tvj = 25C 0,17 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,18 s GE vj R = 0,56 T = 175C 0,19 s Gon vj Abschaltverzgerungszeit, induktive Last I = 1800 A, V = 900 V T = 25C 0,71 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,80 s GE vj R = 0,68 T = 175C 0,85 s Goff vj Fallzeit, induktive Last I = 1800 A, V = 900 V T = 25C 0,14 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,18 s GE vj R = 0,68 T = 175C 0,21 s Goff vj Einschaltverlustenergie pro Puls I = 1800 A, V = 900 V, L = 30 nH T = 25C 405 mJ C CE vj Turn-on energy loss per pulse di/dt = 9100 A/s (T = 175C) T = 125C E 600 mJ vj vj on V = -15 / 15 V, R = 0,56 T = 175C 725 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 1800 A, V = 900 V, L = 30 nH T = 25C 485 mJ C CE vj Turn-off energy loss per pulse du/dt = 2500 V/s (T = 175C) T = 125C E 680 mJ vj vj off V = -15 / 15 V, R = 0,68 T = 175C 780 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 175C 7200 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 26,3 K/kW Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 175 C vj op Temperature under switching conditions Datasheet 2 V 3.1 2020-08-21