X-On Electronics has gained recognition as a prominent supplier of STGWA40H65FB IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWA40H65FB IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWA40H65FB STMicroelectronics

STGWA40H65FB electronic component of STMicroelectronics
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Part No.STGWA40H65FB
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
Datasheet: STGWA40H65FB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.7847 ea
Line Total: USD 3.78 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 3.7847
10 : USD 2.6945
100 : USD 2.457
500 : USD 2.3389
1000 : USD 2.3231

0
Ship by Tue. 03 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 5.0274
10 : USD 4.9147
30 : USD 4.6096
100 : USD 4.5351

0
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 6.1658
10 : USD 4.0285
25 : USD 3.8525

   
Manufacturer
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RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the STGWA40H65FB from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWA40H65FB and other electronic components in the IGBT Transistors category and beyond.

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STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J 3 2 1 3 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage: V = 1.6 V (typ) I = 40 A CE(sat) C Safe paralleling 3 2 1 Tight parameter distribution TO-247 long leads Low thermal resistance C(2, TAB) Applications Welding G(1) Power factor correction UPS Solar inverters Chargers E(3) G1C2TE3 Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGFW40H65FB STGW40H65FB STGWA40H65FB DS9908 - Rev 8 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247, TO-247 long leads TO-3PF V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 160 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 283 98.6 W TOT C Insulation withstand voltage (RMS) from all three leads to external heat sink V 3.5 kV ISO (t = 1 s T = 25 C) C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247, TO-247 long leads TO-3PF R Thermal resistance, junction-to-case 0.53 1.52 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9908 - Rev 8 page 2/20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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